SPP12N50C3_09 INFINEON | Alldatasheet
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2009-11-30Rev. 3.1 Page 1 SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
- PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-1 2 3 P-TO220-3-31 1 2 3 Marking 12N50C3 12N50C3 12N50C3 Type Package Ordering Code SPP12N50C3 PG-TO220 Q67040-S4579 SPI12N50C3 PG-TO262 Q67040-S4578 SPA12N50C3 PG-TO220FP SP000216322 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C ID 11.6 11.61) 71) A Pulsed drain current, tp limited by Tjmax ID puls 34.8 34.8 A Avalanche energy, single pulse ID=5.5A, VDD=50V EAS 340 340 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=11.6A, VDD=50V EAR 0.6 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11.6 11.6 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 125 33 W Operating and storage temperature Tj , Tstg -55...+150 °C Reverse diode dv/dt Gate source voltage dv/dt 15 V/ns7)
2009-11-30Rev. 3.1 Page 2 SPP12N50C3 SPI12N50C3, SPA12N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 400 V, ID = 11.6 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s4) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=11.6A - 600 - Gate threshold voltage VGS(th) ID=500µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=500V, VGS=0V, Tj=25°C Tj=150°C 0.1 100 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=7A Tj=25°C Tj=150°C 0.34 0.92 0.38 Ω Gate input resistance RG f=1MHz, open drain - 1.4 -
2009-11-30Rev. 3.1 Page 3 SPP12N50C3 SPI12N50C3, SPA12N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=7A - 8 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1200 - pF Output capacitance Coss - 400 - Reverse transfer capacitance Crss - 30 - Effective output capacitance,5) energy related Co(er) VGS=0V, VDS=0V to 400V - 45 - Effective output capacitance,6) time related Co(tr) - 92 - Turn-on delay time td(on) VDD=380V, VGS=0/10V, ID=11.6A, RG=6.8Ω - 10 - ns Rise time tr - 8 - Turn-off delay time td(off) - 45 - Fall time tf - 8 - Gate Charge Characteristics Gate to source charge Qgs VDD=400V, ID=11.6A - 5 - nC Gate to drain charge Qgd - 26 - Gate charge total Qg VDD=400V, ID=11.6A, VGS=0 to 10V - 49 - Gate plateau voltage V(plateau) VDD=400V, ID=11.6A - 5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 6Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 7ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.
2009-11-30Rev. 3.1 Page 4 SPP12N50C3 SPI12N50C3, SPA12N50C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 11.6 A Inverse diode direct current, pulsed ISM - - 34.8 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=400V, IF=IS , diF/dt=100A/µs - 380 - ns Reverse recovery charge Qrr - 5.5 - µC Peak reverse recovery current Irrm - 38 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1100 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_I SPA SPP_I SPA Rth1 0.015 0.15 K/W Cth1 0.0001878 0.0001878 Ws/K Rth2 0.03 0.03 Cth2 0.0007106 0.0007106 Rth3 0.056 0.056 Cth3 0.000988 0.000988 Rth4 0.197 0.194 Cth4 0.002791 0.002791 Rth5 0.216 0.413 Cth5 0.007285 0.007401 Rth6 0.083 2.522 Cth6 0.063 0.412 External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
209-11-30Rev. 3.1 Page 5 SPP12N50C3 SPI12N50C3, SPA12N50C3
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 110 120 W 140 SPP12N50C3 Ptot
2 Power dissipation FullPAK
P tot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W Ptot
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
4 Safe operating area FullPAK
ID = f (VDS) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC
2009-011-30Rev. 3.1 Page 6 SPP12N50C3 SPI12N50C3, SPA12N50C3
5 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
6 Transient thermal impedance FullPAK
ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 6.5V 20V 10V 8 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 20V 7.5V
2009-11-30Rev. 3.1 Page 7 SPP12N50C3 SPI12N50C3, SPA12N50C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 14 16 A 20 ID 0.4 0.6 0.8 1.2 1.4 1.6 Ω RDS(on) 4V 4.5V 5V 5.5V 6V 6.5V 20V
10 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ω 2.1 SPP12N50C3 RDS(on) typ 98% 11 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 8 V 10 VGS A ID 25°C 150°C 12 Typ. gate charge VGS = f (QGate) parameter: ID = 11.6 A pulsed 0 10 20 30 40 50 nC 70 QGate V SPP12N50C3 VGS 0,8 VDS max DS maxV0,2
2009-11-30Rev. 3.1 Page 8 SPP12N50C3 SPI12N50C3, SPA12N50C3
13 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP12N50C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
14 Avalanche SOA
I AR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C
15 Avalanche energy
E AS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 mJ 350 EAS
16 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 450 460 470 480 490 500 510 520 530 540 550 560 570 V 600 SPP12N50C3 V(BR)DSS
2009-11-30Rev. 3.1 Page 9 SPP12N50C3 SPI12N50C3, SPA12N50C3
17 Avalanche power losses
PAR = f (f ) parameter: EAR=0.6mJ 10 4 10 5 10 6 Hz f 100 150 200 W 300 PAR 18 Typ. capacitances C = f ( VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 V 500 VDS -110 010 110 210 310 410 pF C Ciss Coss Crss 19 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 V 500 VDS µJ Eoss
2009-11-30Rev. 3.1 Page 10 SPP12N50C3 SPI12N50C3, SPA12N50C3 Definition of diodes switching characteristics
2009-11-30Rev. 3.1 Page 11 SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO-220-3-1, PG-TO220-3-21
2009-11-30Rev. 3.1 Page 12 SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)
2009-11-30Rev. 3.1 Page 13 SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
2009-11-30Rev. 3.1 Page 14 SPP12N50C3 SPI12N50C3, SPA12N50C3 Published by Infineon Technologies AG
81726 Munich, Germany
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