SPP11N80C3_05 INFINEON | Alldatasheet
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Technical content
Rev. 2.4 Page 1 2005-08-24 SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor VDS 800 V RDS(on) 0.45 Ω ID 11 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
- PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) PG-TO220-3-31 PG-TO220 P-TO220-3-31 1 2 3 Marking 11N80C3 11N80C3 Type Package Ordering Code SPP11N80C3 PG-TO220 Q67040-S4438 SPA11N80C3 PG-TO220-3-31 SP000216320 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 7.1 111) 7.11) A Pulsed drain current, tp limited by Tjmax ID puls 33 33 A Avalanche energy, single pulse ID=2.2A, VDD =50V EAS 470 470 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD =50V EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 156 41 W SPP Operating and storage temperature Tj , Tstg -55...+150 °C
Rev. 2.4 Page 2 2005-08-24 SPP11N80C3 SPA11N80C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 640 V, ID = 11 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.8 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 800 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=11A - 870 - Gate threshold voltage VGS(th) ID=680µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =800V, V GS =0V, Tj=25°C Tj=150°C 0.5 200 µA Gate-source leakage current IGSS V GS =20V, V DS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=7.1A Tj=25°C Tj=150°C 0.39 1.1 0.45 Ω Gate input resistance R G f=1MHz, open drain - 0.7 -
Rev. 2.4 Page 3 2005-08-24 SPP11N80C3 SPA11N80C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=7.1A - 7.5 - S Input capacitance C iss V GS =0V, VDS =25V, f=1MHz - 1600 - pF Output capacitance C oss - 800 - Reverse transfer capacitanceC rss - 40 - Effective output capacitance,4) energy related Co(er) V GS =0V, V DS =0V to 480V - 44.3 - Effective output capacitance,5) time related Co(tr) - 33.9 - Turn-on delay time td(on) V DD =400V, VGS =0/10V, ID=11A, R G =7.5Ω - 25 - ns Rise time tr - 15 - Turn-off delay time td(off) - 72 82 Fall time tf - 7 10 Gate Charge Characteristics Gate to source charge Q gs V DD =640V, ID=11A - 6 - nC Gate to drain charge Q gd - 25 - Gate charge total Qg V DD =640V, ID=11A, V GS =0 to 10V - 50 60 Gate plateau voltage V(plateau) V DD =640V, ID=11A - 6 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Soldering temperature for TO-263: 220°C, reflow 4Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS.
Rev. 2.4 Page 4 2005-08-24 SPP11N80C3 SPA11N80C3 Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 11 A Inverse diode direct current, pulsed ISM - - 33 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =640V, IF=IS , diF/dt=100A/µs - 550 - ns Reverse recovery charge Q rr - 10 - µC Peak reverse recovery currentIrrm - 33 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1000 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.012 0.012 K/W Cth1 0.0002493 0.0002493 Ws/K Rth2 0.023 0.023 Cth2 0.0009399 0.0009399 Rth3 0.043 0.043 Cth3 0.001298 0.001298 Rth4 0.154 0.176 Cth4 0.003617 0.003617 Rth5 0.175 0.371 Cth5 0.009186 0.00802 Rth6 0.071 2.522 Cth6 0.074 0.412 SPP SPP External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
Rev. 2.4 Page 5 2005-08-24 SPP11N80C3 SPA11N80C3
1 Power dissipation
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 W 170 SPP11N80C3 Ptot
2 Power dissipation FullPAK
P tot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
4 Safe operating area FullPAK
ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC
Rev. 2.4 Page 6 2005-08-24 SPP11N80C3 SPA11N80C3
5 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
6 Transient thermal impedance FullPAK
ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -410 -310 -210 -110 010 110 210 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID 5.5V 6.5V 20V 8 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID 4.5V 5.5V 20V 6.5V
Rev. 2.4 Page 7 2005-08 -24 SPP11N80C3 SPA11N80C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 14 A 18 ID 0.8 1.2 1.4 1.6 1.8 2.2 2.4 2.6 Ω RDS(on) 4.5V 5.5V 6.5V 20V
10 Drain-source on-state resistance
R DS(on) = f (Tj) parameter : ID = 7.1 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 Ω 2.6 SPP11N80C3 RDS(on) typ 98% 11 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 25°C 150°C 12 Typ. gate charge V GS = f (QGate) parameter: ID = 11 A pulsed 0 20 40 60 80 nC 110 QGate V SPP11N80C3 VGS 0,8 VDS max DS maxV0,2
Rev. 2.4 Page 8 2005-08 -24 SPP11N80C3 SPA11N80C3
13 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP11N80C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
14 Avalanche SOA
I AR = f (tAR) par.: Tj≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=25°C Tj(START)=125°C
15 Avalanche energy
E AS = f (Tj) par.: ID = 2.2 A, VDD = 50 V 20 40 60 80 100 120 °C 150 Tj 100 150 200 250 300 350 400 mJ 500 EAS
16 Drain-source breakdown voltage
V (BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 720 740 760 780 800 820 840 860 880 900 920 940 V 980 SPP11N80C3 V(BR)DSS
Rev. 2.4 Page 9 2005-08-24 SPP11N80C3 SPA11N80C3
17 Avalanche power losses
PAR = f (f ) parameter: EAR =0.2mJ 10 4 10 5 10 6 Hz f 100 W 200 PAR 18 Typ. capacitances C = f (V DS ) parameter: VGS =0V, f=1 MHz 0 100 200 300 400 500 600 V 800 VDS 010 110 210 310 410 pF C C iss C oss C rss 19 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 500 600 V 800 VDS µJ Eoss
Rev. 2.4 Page 10 2005-08-24 SPP11N80C3 SPA11N80C3 Definition of diodes switching characteristics
2005-08-24Rev. 2.4 Page 11 SPP11N80C3 SPA11N80C3 PG-TO220-3-1, PG-TO220-3-21
2005-08-24Rev. 2.4 Page 12 SPP11N80C3 SPA11N80C3 PG-TO220-3-31 (FullPAK)
Rev. 2.4 Page 13 2005-08 -24 SPP11N80C3 SPA11N80C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.