SPP11N65C3

SPP11N65C3_07 INFINEON | Alldatasheet

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Technical content

2007-08-30 Rev. 2.9 Page 1 SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor V DS 650 V RDS(on) 0.38 Ω ID 11 A Feature

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance PG-TO262 PG-TO220FP PG-TO220 Marking 11N65C3 11N65C3 11N65C3 Type Package Ordering Code SPP11N65C3 PG-TO220 Q67040-S4557 SPA11N65C3 PG-TO220FP SP000216318 SPI11N65C3 PG-TO262 Q67040-S4561 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 111) 71) A Pulsed drain current, tp limited by Tjmax ID puls 33 33 A Avalanche energy, single pulse ID=2.5A, VDD=50V EAS 340 340 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=4A, VDD=50V EAR 0.6 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 4 4 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 125 33 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C

2007-08-30 Rev. 2.9 Page 2 SPP11N65C3,SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=4A - 730 - Gate threshold voltage VGS(th) ID=500µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C Tj=150°C 0.1 100 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=7A Tj=25°C Tj=150°C 0.34 0.92 0.38 Ω Gate input resistance RG f=1MHz, open drain - 0.86 -

2007-08-30 Rev. 2.9 Page 3 SPP11N65C3,SPA11N65C3 SPI11N65C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=7A - 8.3 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1200 - pF Output capacitance Coss - 390 - Reverse transfer capacitance Crss - 30 - Effective output capacitance,4) energy related Co(er) VGS=0V, VDS=0V to 480V - 45 - Effective output capacitance,5) time related Co(tr) - 85 - Turn-on delay time td(on) VDD=380V, VGS=0/10V, ID=11A, RG=6.8Ω - 10 - ns Rise time tr - 5 - Turn-off delay time td(off) - 44 70 Fall time tf - 5 9 Gate Charge Characteristics Gate to source charge Qgs VDD =480V, ID=11A - 5.5 - nC Gate to drain charge Qgd - 22 - Gate charge total Qg VDD =480V, ID=11A, VGS=0 to 10V - 45 60 Gate plateau voltage V(plateau) VDD =480V, ID=11A - 5.5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

2007-08-30 Rev. 2.9 Page 4 SPP11N65C3,SPA11N65C3 SPI11N65C3 Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 11 A Inverse diode direct current, pulsed ISM - - 33 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , diF/dt=100A/µs - 400 600 ns Reverse recovery charge Qrr - 6 - µC Peak reverse recovery current Irrm - 41 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1200 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.015 0.15 K/W Cth1 0.0001878 0.0001878 Ws/K Rth2 0.03 0.03 Cth2 0.0007106 0.0007106 Rth3 0.056 0.056 Cth3 0.000988 0.000988 Rth4 0.197 0.194 Cth4 0.002791 0.002791 Rth5 0.216 0.413 Cth5 0.007285 0.007401 Rth6 0.083 2.522 Cth6 0.063 0.412 SPP_I SPP_I External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

2007-08-30 Rev. 2.9 Page 5 SPP11N65C3,SPA11N65C3 SPI11N65C3

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 110 120 W 140 SPP11N65C3 Ptot

2 Power dissipation FullPAK

P tot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W Ptot

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TC=25°C V VDS -210 -110 010 110 210 A ID tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

4 Safe operating area FullPAK

ID = f (VDS) parameter: D = 0, TC = 25°C V VDS -210 -110 010 110 210 A ID tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

2007-08-30 Rev. 2.9 Page 6 SPP11N65C3,SPA11N65C3 SPI11N65C3

5 Transient thermal impedance FullPAK

ZthJC = f (tp) parameter: D = tp/t s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 3 6 9 12 15 18 21 V 27 VDS A ID 4,5V 5,5V 6,5V 20V 10V 7 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 20V 7.5V 8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 14 16 A 20 ID 0.4 0.6 0.8 1.2 1.4 1.6 Ω RDS(on) 4V 4.5V 5V 5.5V 6V 6.5V 20V

2007-08-30 Rev. 2.9 Page 7 SPP11N65C3,SPA11N65C3 SPI11N65C3

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ω 2.1 SPP11N65C3 R DS(on) typ 98% 10 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 V 15 VGS A ID 25°C 150°C

12 Forward characteristics of body diode

I F = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP11N65C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 11 Typ. gate charge V GS = f (QGate) parameter: ID = 11 A pulsed 0 10 20 30 40 50 nC 70 QGate V SPP11N65C3 VGS 0,8 VDS max DS maxV0,2

2007-08-30 Rev. 2.9 Page 8 SPP11N65C3,SPA11N65C3 SPI11N65C3 13 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=6.8Ω 0 2 4 6 8 A 12 ID ns t tr td(off) td(on) tf 14 Typ. switching time t = f (R G), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=11 A 0 10 20 30 40 50 Ω 70 RG 100 150 200 250 ns 350 t td(off) td(on) tr tf 15 Typ. drain current slope di/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=11A 0 20 40 60 80 Ω 120 RG 500 1000 1500 2000 A/µs 3000 di/dt di/dt(on) di/dt(off) 16 Typ. drain source voltage slope dv/dt = f(R G), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=11A 0 10 20 30 40 50 Ω 70 RG 100 110 120 V/ns 140 dv/dt dv/dt(off) dv/dt(on)

2007-08-30 Rev. 2.9 Page 9 SPP11N65C3,SPA11N65C3 SPI11N65C3 17 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=6.8Ω 0 2 4 6 8 A 12 ID 0.005 0.01 0.015 0.02 0.025 0.03 mWs 0.04 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses 18 Typ. switching losses E = f(RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V,ID=11A 0 10 20 30 40 50 Ω 70 RG 0.04 0.08 0.12 0.16 mWs 0.24 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses

19 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C µs tAR 0.5 1.5 2.5 A IAR Tj(Start)=25°C Tj(Start)=125°C

20 Avalanche energy

E AS = f (Tj) par.: ID = 2.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 mJ 350 EAS

2007-08-30 Rev. 2.9 Page 10 SPP11N65C3,SPA11N65C3 SPI11N65C3

22 Avalanche power losses

PAR = f (f ) parameter: EAR=0.6mJ Hz f 100 150 200 W 300 PAR

21 Drain-source breakdown voltage

V (BR)DSS = f (Tj) 23 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 pFC Ciss Coss Crss 24 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 5.5 µJ 7.5 Eoss -60 -20 20 60 100 °C 180 Tj 585 605 625 645 665 685 705 725 745 V 785 V(BR)DSS

2007-08-30 Rev. 2.9 Page 11 SPP11N65C3,SPA11N65C3 SPI11N65C3 Definition of diodes switching characteristics

2007-08-30Rev. 2.9 Page 12 SPP11N65C3, SPA11N65C3 SPI11N65C3 PG-TO220-3-1, PG-TO220-3-21

2007-08-30Rev. 2.9 Page 13 SPP11N65C3, SPA11N65C3 SPI11N65C3 PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute )

2007-08-30Rev. 2.9 Page 14 SPP11N65C3, SPA11N65C3 SPI11N65C3 PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)

2007-08-30 Rev. 2.9 Page 15 SPP11N65C3,SPA11N65C3 SPI11N65C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.