SPP11N60S5_09 INFINEON | Alldatasheet
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2009-11-30Rev. 2.7 Page 1 SPP11N60S5 SPI11N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 0.38 Ω ID 11 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance PG-TO220PG-TO262 P-TO220-3-1 2 3 Type Package Ordering Code SPP11N60S5 PG-TO220 Q67040-S4198 SPI11N60S5 PG-TO262 Q67040-S4338 Marking 11N60S5 11N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current, tp limited by Tjmax ID puls 22 Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V EAS 340 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 11 A, VDD = 50 V EAR 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +150 °C
2009-11-30Rev. 2.7 Page 2 SPP11N60S5 SPI11N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=11A - 700 - Gate threshold voltage VGS(th) ID=500µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 250 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=7A, Tj=25°C Tj=150°C 0.34 0.92 0.38 Ω Gate input resistance RG f=1MHz, open Drain - 29 -
2009-11-30Rev. 2.7 Page 3 SPP11N60S5 SPI11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=7A - 6 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1460 - pF Output capacitance Coss - 610 - Reverse transfer capacitance Crss - 21 - Effective output capacitance,3) energy related Co(er) VGS=0V, VDS=0V to 480V - 45 - pF Effective output capacitance,4) time related Co(tr) - 85 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=11A, RG=6.8Ω - 130 - ns Rise time tr - 35 - Turn-off delay time td(off) - 150 225 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=11A - 10.5 - nC Gate to drain charge Qgd - 24 - Gate charge total Qg VDD=350V, ID=11A, VGS=0 to 10V - 41.5 54 Gate plateau voltage V(plateau) VDD=350V, ID=11A - 8 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2009-11-30Rev. 2.7 Page 4 SPP11N60S5 SPI11N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 11 A Inverse diode direct current, pulsed ISM - - 22 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 650 1105 ns Reverse recovery charge Qrr - 7.9 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.015 K/W Rth2 0.03 Rth3 0.056 Rth4 0.197 Rth5 0.216 Rth6 0.083 Thermal capacitance Cth1 0.0001878 Ws/K Cth2 0.0007106 Cth3 0.000988 Cth4 0.002791 Cth5 0.007285 Cth6 0.063 External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
2009-11-30Rev. 2.7 Page 5 SPP11N60S5 SPI11N60S5
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 110 120 W 140 SPP11N60S5 Ptot
2 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC3 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 VDS 25 V A ID 20V 12V 10V
2009-11-30Rev. 2.7 Page 6 SPP11N60S5 SPI11N60S5 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 20V 12V 10V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 14 A 18 ID 0.5 mΩ RDS(on) 20V 12V 10V
7 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ω 2.1 SPP11N60S5 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 4 8 12 V 20 VGS A ID 25 °C 150 °C
2009-11-30Rev. 2.7 Page 7 SPP11N60S5 SPI11N60S5 9 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 0 10 20 30 40 50 nC 65 QGate V SPP11N60S5 VGS
0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP11N60S5 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C
12 Avalanche energy
EAS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 mJ 350 EAS
2009-11-30Rev. 2.7 Page 8 SPP11N60S5 SPI11N60S5
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP11N60S5 V(BR)DSS
14 Avalanche power losses
PAR = f (f ) parameter: EAR=0.6mJ 10 4 10 5 10 6 Hz f 100 150 200 W 300 PAR 15 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 pF C Ciss Coss Crss 16 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 5.5 µJ 7.5 Eoss
2009-11-30Rev. 2.7 Page 9 SPP11N60S5 SPI11N60S5 Definition of diodes switching characteristics
2009-11-30Rev. 2.7 Page 10 SPP11N60S5 SPI11N60S5 PG-TO220-3-1, PG-TO220-3-21
2009-11-30Rev. 2.7 Page 11 SPP11N60S5 SPI11N60S5 PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
2009-11-30Rev. 2.7 Page 12 SPP11N60S5 SPI11N60S5 Published by Infineon Technologies AG
81726 Munich, Germany
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