SPP11N60CFD_07 INFINEON | Alldatasheet
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2007-08-30Rev. 2.6 Page 1 SPP11N60CFD Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.44 Ω ID 11 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Intrinsic fast-recovery body diode
- Extreme low reverse recovery charge PG-TO220 Type Package Ordering Code SPP11N60CFD PG-TO220 Q67040-S4618 Marking 11N60CFD Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current, tp limited by Tjmax ID puls 28 Avalanche energy, single pulse I D = 5.5 A, VDD = 50 V EAS 340 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 11 A, VDD = 50 V EAR 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 A Reverse diode dv/dt IS=11A, VDS=480V, Tj=125°C dv/dt 40 V/ns Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +150 °C
2007-08-30Rev. 2.6 Page 2 SPP11N60CFD Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C dv/dt 80 V/ns Maximum diode commutation speed VDS = 480 V, ID = 11 A, Tj = 125 °C diF/dt 600 A/µs Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=11A - 700 - Gate threshold voltage VGS(th) ID=500µΑ, VGS=VDS 3 4 5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 1.1 900 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=7A, Tj=25°C Tj=150°C 0.38 1.02 0.44 Ω Gate input resistance RG f=1MHz, open Drain - 0.86 -
2007-08-30Rev. 2.6 Page 3 SPP11N60CFD Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=7A - 8.3 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1200 - pF Output capacitance Coss - 390 - Reverse transfer capacitance Crss - 30 - Effective output capacitance,2) energy related Co(er) VGS=0V, VDS=0V to 480V - 45 - pF Effective output capacitance,3) time related Co(tr) - 85 - Turn-on delay time td(on) VDD=380V, VGS=0/10V, ID=11A, RG=6.8Ω - 34 - ns Rise time tr - 18 - Turn-off delay time td(off) - 43 - Fall time tf - 7 - Gate Charge Characteristics Gate to source charge Qgs VDD=480V, ID=11A - 9 - nC Gate to drain charge Qgd - 23 - Gate charge total Qg VDD=480V, ID=11A, VGS=0 to 10V - 48 64 Gate plateau voltage V(plateau) VDD=480V, ID=11A - 7 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2007-08-30Rev. 2.6 Page 4 SPP11N60CFD Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 11 A Inverse diode direct current, pulsed ISM - - 28 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , diF/dt=100A/µs - 140 - ns Reverse recovery charge Qrr - 0.7 - µC Peak reverse recovery current Irrm - 11 - A Peak rate of fall of reverse recovery current dirr/dt - 1200 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.015 K/W Rth2 0.03 Rth3 0.056 Rth4 0.197 Rth5 0.216 Rth6 0.083 Thermal capacitance Cth1 0.0001878 Ws/K Cth2 0.0007106 Cth3 0.000988 Cth4 0.002791 Cth5 0.007285 Cth6 0.063 External HeatsinkTj T case Tamb C th1 C th2 Rth1 R th,n C th,n Ptot (t)
2007-08-30Rev. 2.6 Page 5 SPP11N60CFD
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 110 120 W 140 SPP11N60CFD Ptot
2 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TC=25°C V VDS -210 -110 010 110 210 A ID tp=0.001 ms tp=0.01 ms tp=0.1 ms tp=1 ms DC
3 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID Vgs = 20V Vgs = 10V Vgs = 9V Vgs = 8.5V Vgs = 8V Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V
2007-08-30Rev. 2.6 Page 6 SPP11N60CFD 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID Vgs = 20V Vgs = 8.5V Vgs = 8V Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 4 8 12 16 20 A 28 ID 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Ω RDS(on) Vgs = 6V Vgs = 6.5V Vgs = 7V Vgs = 7.5V Vgs = 8V Vgs = 8.5V Vgs = 20V
7 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 Ω 2.6 SPP11N60CFD RDS(on) typ 98% 8 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID Tj = 150?C Tj = 25?C
2007-08-30Rev. 2.6 Page 7 SPP11N60CFD 9 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 0 10 20 30 40 50 nC 70 QGate V SPP11N60CFD VGS
0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
I F = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP11N60CFD IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
11 Avalanche SOA
I AR = f (tAR) par.: Tj ≤ 150 °C µs tAR A IAR Tj(START) =125°C Tj(START) =25°C
12 Avalanche energy
E AS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 mJ 350 EAS
2007-08-30Rev. 2.6 Page 8 SPP11N60CFD
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP11N60CFD V(BR)DSS
14 Avalanche power losses
P AR = f (f ) parameter: EAR=0.6mJ Hz f 100 150 200 W 300 PAR 15 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 pFC Ciss Coss Crss 16 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 5.5 µJ 7.5 Eoss
2007-08-30Rev. 2.6 Page 9 SPP11N60CFD 17 Typ. reverse recovery charge Qrr = f(TJ) parameter: ID = 11A 25 50 75 °C 125 Tj 600 700 800 900 1000 1100 1200 Qrr [nC] 18 Typ. reverse recovery charge Qrr = f(ID) parameter: di/dt = 100 A/µs 1 2 3 4 5 6 7 8 9 A 11 ID 200 300 400 500 600 700 800 900 1000 1100 1200 Qrr [nC] Tj = 25°C Tj = 125°C 19 Typ. reverse recovery charge Qrr = f(di/dt) parameter: ID = 11 A 100 200 300 400 500 600 700 A/µs 900 di/dt 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 Qrr [nC] Tj = 125°C Tj = 25°C
2007-08-30Rev. 2.6 Page 10 SPP11N60CFD Definition of diodes switching characteristics
2007-08-30Rev. 2.6 Page 11 SPP11N60CFD PG-TO-220-3-1, PG-TO220-3-21
2007-08-30Rev. 2.6 Page 12 SPP11N60CFD Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.