SPP10N10L

SPP10N10L INFINEON | Alldatasheet

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2005-02-14Rev. 2.1 Page 1 SPI10N10L SPP10N10L SIPMOS Power-Transistor Product Summary VDS 100 V RDS(on) 154 m/G01 ID 10.3 A Feature /G02 N-Channel /G02 Enhancement mode /G02 Logic Level /G02/G03 175°C operating temperature /G02 Avalanche rated /G02 dv/dt rated PG-TO220-3-1PG-TO262-3-1 Marking 10N10L 10N10L Type Package Ordering Code SPP10N10L PG-TO220-3-1 Q67042-S4163 SPI10N10L PG-TO262-3-1 Q67042-S4162 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID 10.3 8.1 A Pulsed drain current TC=25°C ID puls 42.2 Avalanche energy, single pulse ID=10.3 A , VDD=25V, RGS=25/G01 EAS 60 mJ Reverse diode dv/dt IS=10.3A, VDS=80V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 50 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

2005-02-14Rev. 2.1 Page 2 SPI10N10L SPP10N10L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID = 21 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=100V, VGS=0V, Tj=25°C VDS=100V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=8.1A RDS(on) - 169 210 m/G01 Drain-source on-state resistance VGS=10V, ID=8.1A RDS(on) - 124 154 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2005-02 -14Rev. 2.1 Page 3 SPI10N10L SPP10N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS/G02 2*ID*RDS(on)max, ID=8.1A 4.7 9.4 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 355 444 pF Output capacitance Coss - 72 90 Reverse transfer capacitance Crss - 42 63 Turn-on delay time td(on) VDD=50V, VGS=10V, ID=10.3A, RG=13/G01 - 4.6 6.9 ns Rise time tr - 19.1 28.7 Turn-off delay time td(off) - 27.8 41.7 Fall time tf - 17.8 26.7 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=10.3A - 1.1 1.4 nC Gate to drain charge Qgd - 7.3 11 Gate charge total Qg VDD=80V, ID=10.3A, VGS=0 to 10V - 17.7 22 Gate plateau voltage V(plateau) VDD=80V, ID=10.3A - 3.8 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 10.3 A Inv. diode direct current, pulsed ISM - - 42.2 Inverse diode forward voltage VSD VGS=0V, IF=10.3A - 0.93 1.25 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 57 71 ns Reverse recovery charge Qrr - 126 158 nC

2005-02-14Rev. 2.1 Page 4 SPI10N10L SPP10N10L

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC W SPP10N10L Ptot

2 Drain current

I D = f (TC) parameter: VGS/G04 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPP10N10L ID

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 0 10 1 10 2 10 3 V VDS -1 10 0 10 1 10 2 10 A SPP10N10L ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 4.8µs

4 Transient thermal impedance

Z thJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP10N10L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2005-02-14Rev. 2.1 Page 5 SPI10N10L SPP10N10L 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 2 4 6 8 10 V 14 VDS A ID 4.5V 4.7V 5.5V 10V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 2.5 5 7.5 10 12.5 15 17.5 20 A 25 ID 100 150 200 250 300 350 400 m/G01 500 RDS(on) 4.5V 4.7V 5.5V 10V 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G04 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 V 5 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 2 4 6 8 A 11 ID S gfs

2005-02-14Rev. 2.1 Page 6 SPI10N10L SPP10N10L

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 8.1 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj 100 150 200 250 300 350 400 450 500 550 600 /G01 700 SPP10N10L RDS(on) typ 98% 10 Typ. gate threshold voltage V GS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.8 1.2 1.4 1.6 1.8 V 2.4 VGS(th) ID=1mA ID=21µA 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 0 10 1 10 2 10 3 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs VSD -1 10 0 10 1 10 2 10 A SPP10N10L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 10.3 A , VDD = 25 V, RGS = 25 /G01 25 45 65 85 105 125 145 °C 185 Tj mJ EAS 14 Typ. gate charge V GS = f (QGate) parameter: ID = 10.3 A pulsed 0 4 8 12 16 20 nC 28 QGate V SPP10N10L VGS 20V 50V 80V

15 Drain-source breakdown voltage

V (BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj 100 102 104 106 108 110 112 114 V 120 SPP10N10L V(BR)DSS

2005-02-14Rev. 2.1 Page 8 SPI10N10L SPP10N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.