SPP08N50C3_09 INFINEON | Alldatasheet
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2009-11-27Rev. 2.91 Page 1 SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
- PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) PG-TO220FP P G-TO262 PG-TO220 P-TO220-3-31 1 2 3 Marking 08N50C3 08N50C3 08N50C3 Type Package Ordering Code SPP08N50C3 PG-TO220 Q67040-S4567 SPI08N50C3 PG-TO262 Q67040-S4568 SPA08N50C3 PG-TO220FP SP000216306 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 7.6 4.6 7.61) 4.61) A Pulsed drain current, tp limited by Tjmax ID puls 22.8 22.8 A Avalanche energy, single pulse ID=5.5A, VDD =50V EAS 230 230 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.6A, VDD =50V EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.6 7.6 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 83 32 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C Reverse diode dv/dt dv/dt 15 V/ns6)
2009-11-27Rev. 2.91 Page 2 SPP08N50C3, SPI08N50C3 SPA08N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 400 V, ID = 7.6 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thJC - - 1.5 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9 Thermal resistance, junction - ambient, leaded R thJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA FP - - 80 Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 500 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=7.6A - 600 - Gate threshold voltage VGS(th) ID=350µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =500V, V GS =0V, Tj=25°C Tj=150°C 0.5 100 µA Gate-source leakage current IGSS V GS =20V, V DS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=4.6A Tj=25°C Tj=150°C 0.5 1.5 0.6 Ω Gate input resistance R G f=1MHz, open drain - 1.2 -
2009-11-27Rev. 2.91 Page 3 SPP08N50C3, SPI08N50C3 SPA08N50C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=4.6A - 6 - S Input capacitance C iss V GS =0V, VDS =25V, f=1MHz - 750 - pF Output capacitance C oss - 350 - Reverse transfer capacitanceC rss - 12 - Effective output capacitance,4) energy related Co(er) V GS =0V, VDS =400 - 56 - Effective output capacitance,5) time related Co(tr) - 30 - Turn-on delay time td(on) V DD =380V, VGS =0/10V, ID=7.6A, R G =12Ω - 6 - ns Rise time tr - 5 - Turn-off delay time td(off) - 60 - Fall time tf - 7 - Gate Charge Characteristics Gate to source charge Q gs V DD =400V, ID=7.6A - 3 - nC Gate to drain charge Q gd - 17 - Gate charge total Qg V DD =400V, ID=7.6A, V GS =0 to 10V - 32 - Gate plateau voltage V(plateau) V DD =400V, ID=7.6A - 5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Soldering temperature for TO-263: 220°C, reflow 4Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS. 6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.
2009-11-27Rev. 2.91 Page 4 SPP08N50C3, SPI08N50C3 SPA08N50C3 Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 7.6 A Inverse diode direct current, pulsed ISM - - 22.8 Inverse diode forward voltage VSD V GS =0V, IF=IS - 1 1.2 V Reverse recovery time trr V R=400V, IF=IS , diF/dt=100A/µs - 370 - ns Reverse recovery charge Q rr - 3.6 - µC Peak reverse recovery currentIrrm - 25 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 700 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.024 0.024 K/W Cth1 0.00012 0.00012 Ws/K Rth2 0.046 0.046 Cth2 0.0004578 0.0004578 Rth3 0.085 0.085 Cth3 0.000645 0.000645 Rth4 0.308 0.195 Cth4 0.001867 0.001867 Rth5 0.317 0.45 Cth5 0.004795 0.007558 Rth6 0.112 2.511 Cth6 0.045 0.412 SPP_I SPP_I External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
2009-11-27Rev. 2.91 Page 5 SPP08N50C3, SPI08N50C3 SPA08N50C3
1 Power dissipation
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W
100 SPP08N50C3
2 Power dissipation FullPAK
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 150 TC W Ptot
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
4 Safe operating area FullPAK
ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC
2009-11-27Rev. 2.91 Page 6 SPP08N50C3, SPI08N50C3 SPA08N50C3
5 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
6 Transient thermal impedance FullPAK
ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 VDS 25 V A ID 4,5V 5,5V 6,5V 20V 10V 8 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 2 4 6 8 10 12 14 16 18 20 22 V 25 VDS A ID 4.5V 5.5V 20V 6.5V
2009-11-27Rev. 2.91 Page 7 SPP08N50C3, SPI08N50C3 SPA08N50C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 A 15 ID Ω RDS(on) 4.5V 5.5V 6.5V 20V
10 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.4 0.8 1.2 1.6 2.4 2.8 Ω 3.4 SPP08N50C3 RDS(on) typ 98% 11 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 V 10 VGS A ID 25°C 150°C 12 Typ. gate charge VGS = f (QGate) parameter: ID = 7.6 A pulsed 0 5 10 15 20 25 30 35 40 nC 50 QGate V SPP08N50C3 VGS 0,8 VDS max DS maxV0,2
2009-11-27Rev. 2.91 Page 8 SPP08N50C3, SPI08N50C3 SPA08N50C3
13 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP08N50C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
14 Avalanche SOA
I AR = f (tAR) par.: Tj≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C
15 Avalanche energy
E AS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 120 140 160 180 200 220 mJ 260 EAS
16 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 450 460 470 480 490 500 510 520 530 540 550 560 570 V 600 SPP08N50C3 V(BR)DSS
2009-11-27Rev. 2.91 Page 9 SPP08N50C3, SPI08N50C3 SPA08N50C3
17 Avalanche power losses
PAR = f (f ) parameter: EAR =0.5mJ 10 4 10 5 10 6 MHz f 100 200 300 W 500 PAR 18 Typ. capacitances C = f ( VDS ) parameter: VGS =0V, f=1 MHz 0 100 200 300 V 500 VDS 010 110 210 310 410 pF C Ciss Coss Crss 19 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 V 500 VDS 0.5 1.5 2.5 µJ Eoss
2009-11-27Rev. 2.91 Page 10 SPP08N50C3, SPI08N50C3 SPA08N50C3 Definition of diodes switching characteristics
2009-11-27Rev. 2.91 Page 11 SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220-3-1, PG-TO220-3-21
2009-11-27Rev. 2.91 Page 12 SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO-220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)
2009-11-27Rev. 2.91 Page 13 SPP08N5 0C3, SPI08N50C3 SPA08N5 0C3 PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
2009-11-27Rev. 2.91 Page 14 SPP08N50C3, SPI08N50C3 SPA08N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.