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SPP07N65C3_09 INFINEON | Alldatasheet

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2009-07-23Rev. 1.91 Page 1 SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS™ Power Transistor V DS 650 V RDS(on) 0.6 Ω ID 7.3 A Feature

New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute) PG-TO220-3 PG-TO220PG-TO262-3-1 P-TO220-3-1 2 3 P-TO220-3-31 1 2 3 Marking 07N65C3 07N65C3 07N65C3 Type Package SPP07N65C3 PG-TO220 SPI07N65C3 PG-TO262-3 SPA07N65C3 PG-TO220-3 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C ID 7.3 4.6 7.31) 4.61) A Pulsed drain current, tp limited by Tjmax ID puls 21.9 21.9 A Avalanche energy, single pulse ID=1.5A, VDD=50V EAS 230 230 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=2.5A, VDD=50V EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 2.5 2.5 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 83 32 W Operating and storage temperature Tj , Tstg -55...+150 °C

2009-07-23Rev. 1.91 Page 2 SPP07N65C3, SPI07N65C3 SPA07N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=2.5A - 730 - Gate threshold voltage VGS(th) ID=350µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C Tj=150°C 0.5 100 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A Tj=25°C Tj=150°C 0.54 1.46 0.6 Ω Gate input resistance RG f=1MHz, open drain - 0.8 -

2009-07-23Rev. 1.91 Page 3 SPP07N65C3, SPI07N65C3 SPA07N65C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=4.6A - 6 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 790 - pF Output capacitance Coss - 260 - Reverse transfer capacitance Crss - 16 - Effective output capacitance,4) energy related Co(er) VGS=0V, VDS=0V to 480V - 30 - Effective output capacitance,5) time related Co(tr) - 55 - Turn-on delay time td(on) VDD=380V, VGS=0/13V, ID=7.3A, RG=12Ω, Tj=125°C - 6 - ns Rise time tr - 3.5 - Turn-off delay time td(off) - 60 100 Fall time tf - 7 15 Gate Charge Characteristics Gate to source charge Qgs VDD=480V, ID=7.3A - 3 - nC Gate to drain charge Qgd - 9.2 - Gate charge total Qg VDD=480V, ID=7.3A, VGS=0 to 10V - 21 27 Gate plateau voltage V(plateau) VDD=480V, ID=7.3A - 5.5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

2009-07-23Rev. 1.91 Page 4 SPP07N65C3, SPI07N65C3 SPA07N65C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 7.3 A Inverse diode direct current, pulsed ISM - - 21.9 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , diF/dt=100A/µs - 400 600 ns Reverse recovery charge Qrr - 4 - µC Peak reverse recovery current Irrm - 28 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 800 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_I SPA SPP_I SPA Rth1 0.024 0.024 K/W Cth1 0.00012 0.00012 Ws/K Rth2 0.046 0.046 Cth2 0.0004578 0.0004578 Rth3 0.085 0.085 Cth3 0.000645 0.000645 Rth4 0.308 0.195 Cth4 0.001867 0.001867 Rth5 0.317 0.45 Cth5 0.004795 0.007558 Rth6 0.112 2.511 Cth6 0.045 0.412 External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

2009-07-23Rev. 1.91 Page 5 SPP07N65C3, SPI07N65C3 SPA07N65C3

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W 100 SPP07N65C3 Ptot

2 Power dissipation FullPAK

P tot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W Ptot

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

4 Safe operating area FullPAK

ID = f (VDS) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

2009-07-23Rev. 1.91 Page 6 SPP07N65C3, SPI07N65C3 SPA07N65C3

5 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

6 Transient thermal impedance FullPAK

ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 VDS 25 V A ID 4,5V 5,5V 6,5V 20V 10V 8 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 2 4 6 8 10 12 14 16 18 20 22 V 25 VDS A ID 4.5V 5.5V 20V 6.5V

2009-07-23Rev. 1.91 Page 7 SPP07N65C3, SPI07N65C3 SPA07N65C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 A 15 ID Ω RDS(on) 4.5V 5.5V 6.5V 20V

10 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.4 0.8 1.2 1.6 2.4 2.8 Ω 3.4 SPP07N65C3 RDS(on) typ 98% 11 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 25°C 150°C 12 Typ. gate charge VGS = f (QGate) parameter: ID = 7.3 A pulsed 0 4 8 12 16 20 24 28 nC 34 QGate V SPP07N65C3 VGS 0,8 VDS max DS maxV0,2

2009-07-23Rev. 1.91 Page 8 SPP07N65C3, SPI07N65C3 SPA07N65C3

13 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP07N65C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 14 Typ. switching time t = f (I D), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=12Ω 0 1 2 3 4 5 6 A 8 ID ns t td(off) tf td(on) tr 15 Typ. switching time t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=7.3 A 0 20 40 60 80 100 Ω 130 RG 100 150 200 250 300 350 400 ns 500 t td(off) td(on) tf tr 16 Typ. drain current slope di/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=7.3A 0 20 40 60 80 100 Ω 130 RG 500 1000 1500 2000 A/µs 3000 di/dt di/dt(on) di/dt(off)

2009-07-23Rev. 1.91 Page 9 SPP07N65C3, SPI07N65C3 SPA07N65C3 17 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=7.3A 0 20 40 60 80 Ω 120 RG V/ns 100 dv/dt dv/dt(on) dv/dt(off) 18 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=12Ω 0 1 2 3 4 5 6 A 8 ID 0.005 0.01 0.015 mWs 0.025 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 19 Typ. switching losses E = f( RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V,ID=11A 0 20 40 60 80 100 Ω 130 RG 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 mWs 0.2 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses.

20 Avalanche SOA

I AR = f (tAR) par.: Tj ≤ 150 °C

2009-07-23Rev. 1.91 Page 10 SPP07N65C3, SPI07N65C3 SPA07N65C3

21 Avalanche energy

EAS = f (Tj) par.: ID = 1.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 120 140 160 180 200 220 mJ 260 EAS

23 Avalanche power losses

P AR = f (f ) parameter: EAR=0.5mJ 10 4 10 5 10 6 MHz f 100 200 300 W 500 PAR

22 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 585 605 625 645 665 685 705 725 745 V 785 SPP07N65C3 V(BR)DSS 24 Typ. capacitances C = f ( VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 pF C Ciss Coss Crss

2009-07-23Rev. 1.91 Page 11 SPP07N65C3, SPI07N65C3 SPA07N65C3 25 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 µJ 5.5 Eoss Definition of diodes switching characteristics

2009-07-23Rev. 1.91 Page 12 SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3

2009-07-23Rev. 1.91 Page 13 SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO-220-3 (FullPAK)

2009-07-23Rev. 1.91 Page 14 SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO262-3, PG-TO262-3 (I²-PAK)

2009-07-23Rev. 1.91 Page 15 SPP07N65C3, SPI07N65C3 SPA07N65C3

Product Information

SPP07N65C3 specifications and overview.

Summary

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 1.91 2009-07-23

Description

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 1.91 2009-07-23

Source title SPP07N65C3_09 Datasheet(PDF) - Infineon Technologies AG

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