SPP02N60S5_09 INFINEON | Alldatasheet

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Technical content

2009-11-26Rev. 2.7 Page 1 SPP02N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 3 Ω ID 1.8 A Feature

  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • Ultra low effective capacitances
  • Improved transconductance PG-TO220 P-TO220-3-1 2 3 Type Package Ordering Code SPP02N60S5 PG-TO220 Q67040-S4181 Marking 02N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 1.8 1.1 A Pulsed drain current, tp limited by Tjmax ID puls 3.2 Avalanche energy, single pulse ID = 1.35 A, VDD = 50 V EAS 50 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 1.8 A, VDD = 50 V EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 25 W Operating and storage temperature Tj , Tstg -55... +150 °C

2009-11-26Rev. 2.7 Page 2 SPP02N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 1.8 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 5 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=1.8A - 700 - Gate threshold voltage VGS(th) ID=80µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 0.5 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=1.1A, Tj=25°C Tj=150°C 2.7 7.3 Ω

2009-11-26Rev. 2.7 Page 3 SPP02N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=1.1A - 1.4 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 240 - pF Output capacitance Coss - 77 - Reverse transfer capacitance Crss - 4.4 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=1.8A, RG=50Ω - 35 - ns Rise time tr - 35 - Turn-off delay time td(off) - 35 42 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=1.8A - 2.3 - nC Gate to drain charge Qgd - 4.5 - Gate charge total Qg VDD=350V, ID=1.8A, VGS=0 to 10V - 7.3 9.5 Gate plateau voltage V(plateau) VDD=350V, ID=1.8A - 8 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow

2009-11-26Rev. 2.7 Page 4 SPP02N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 1.8 A Inverse diode direct current, pulsed ISM - - 3.2 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 860 1460 ns Reverse recovery charge Qrr - 1.6 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.1 K/W Rth2 0.184 Rth3 0.306 Rth4 1.207 Rth5 0.974 Rth6 0.251 Thermal capacitance Cth1 0.00002806 Ws/K Cth2 0.0001113 Cth3 0.0001679 Cth4 0.000547 Cth5 0.001388 Cth6 0.019 External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

2009-11-26Rev. 2.7 Page 5 SPP02N60S5

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W SPP02N60S5 Ptot

2 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 3 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 7.5V 8.5V 10V 12V 20V

4 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 1.1 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj Ω SPP02N60S5 RDS(on) typ 98%

2009-11-26Rev. 2.7 Page 6 SPP02N60S5 5 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 4 8 12 VGS 20 V A ID 6 Typ. gate charge VGS = f (QGate) parameter: ID = 1.8 A pulsed 0 1 2 3 4 5 6 7 8 nC 10 QGate V SPP02N60S5 VGS

0.2 VDS max

0.8 VDS max

7 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -210 -110 010 110 A SPP02N60S5 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

8 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.2 0.4 0.6 0.8 1.2 1.4 1.6 A IAR Tj(START)=25°C Tj(START)=125°C

2009-11-26Rev. 2.7 Page 7 SPP02N60S5

9 Avalanche energy

EAS = f (Tj) par.: ID = 1.35 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj mJ EAS

10 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP02N60S5 V(BR)DSS 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 10 20 30 40 50 60 70 80 V 100 VDS 010 110 210 310 410 pF C Ciss Coss Crss

2009-11-26Rev. 2.7 Page 8 SPP02N60S5 Definition of diodes switching characteristics

2009-11-26Rev. 2.7 Page 9 SPP02N60S5 PG-TO220-3-1, PG-TO220-3-21

2009-11-26Rev. 2.7 Page 10 SPP02N60S5