SPN9977 SYNC-POWER | Alldatasheet
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2009/04/25 Ver.1 Page 1 SPN9977 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN9977 is the N-Channel logic enhancement mode power field effect transistors are produced using super high cell density , DMOS trench technology. The SPN9977 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. z Power Management in Note book z Powered System z DC/DC Converter z Load Switch FEATURES PIN CONFIGURATION TO-252 TO-251 PART MARKING 60V/8A,RDS(ON)= 115mΩ@VGS= 10V 60V/6A,RDS(ON)= 110mΩ@VGS= 4.5V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design
2009/04/25 Ver.1 Page 2 SPN9977 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 S Source
3 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPN9977T252RGB TO-252 SPN9977 SPN9977T251TGB TO-251 SPN9977 ※ SPN9977T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ※ SPN9977T251RGB : Tube ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 60 V Gate –Source V oltage V GSS ±20 V TA=25℃ 14 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID 9.0 A Pulsed Drain Current I DM 45 A Avalanche Current I AS 14 A TO-252-2L 40 Power Dissipation T A=25℃ TO-251 PD W Operating Junction Temperature T J 150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 100 /W ℃
2009/04/25 Ver.1 Page 3 SPN9977 N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 60 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 0.5 1.5 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=60V ,VGS=0V 1 Zero Gate V oltage Drain Current I DSS VDS=60V ,VGS=0V TJ=85℃ 5 uA On-State Drain Current I D(on) V DS≥5V ,VGS =10V 14 A VGS= 10V ,ID=8A 0.110 0.115Drain-Source On-Resistance R DS(on) VGS=4.5V ,ID=6A 0.105 0.110 Ω Forward Transconductance gfs V DS=15V ,ID=4.3A 15 S Diode Forward V oltage V SD I S=1.7A,VGS =0V 0.8 1.2 V Dynamic Total Gate Charge Q g 15 20 Gate-Source Charge Q gs 2.5 Gate-Drain Charge Q gd VDS=30V ,VGS=10V ID= 4.3A 2.6 nC Input Capacitance C iss 675 Output Capacitance C oss 80 Reverse Transfer Capacitance C rss VDS=15,VGS=0V f=1MHz pF td(on) 10 20 Turn-On Time tr 15 25 td(off) 25 35 Turn-Off Time tf VDD=30V ,RL=8.8Ω ID≡3.4A,VGEN=10V RG=1Ω 12 20 nS
2009/04/25 Ver.1 Page 4 SPN9977 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
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2009/04/25 Ver.1 Page 8 SPN9977 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE
2009/04/25 Ver.1 Page 9 SPN9977 N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE
2009/04/25 Ver.1 Page 10 SPN9977 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com