SPN90T06T220TGB SYNC-POWER | Alldatasheet
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Technical content
N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN90T06 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These d evices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching is required. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool FEATURES PIN CONFIGURATION (PPAK5x6-8L) 60V/90A,RDS(ON)=5.3mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L/TO-220F-3L/TO-252-2L/ PPAK5x6-8L package design TO-220 TO-220F TO -252 PPAK5x6 PART MARKING
N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 D Drain
3 S Source
PIN DESCRIPTION (PPAK5x6-8L) Pin Symbol Description
1 S Source
2 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPN90T06T220TGB TO-220-3L SPN90T06 SPN90T06T220FTGB TO-220F-3L SPN90T06 SPN90T06T252RGB TO-252-2L SPN90T06 SPN90T06DN8RGB PPAK5x6-8L SPN90T06 ※ SPN90T06T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN90T06T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN90T06T252RGB : Tape&Reel ; Pb – Free ; Halogen - Free ※ SPN90T06DN8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS 60 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current(Silicon Limited) TC=25℃ ID 90 A TC=100℃ 57 Continuous Drain Current(Package Limited) TC=25℃ ID 60 A Pulsed Drain Current IDM 250 A Avalanche Energy with Single Pulse ( TC=25℃, L=0.4mH. ) EAS 80 mJ Power Dissipation@ Tc=25℃ TO-220 PD 104 W Power Dissipation@ Tc=25℃ TO-252/TO-220F 93 Power Dissipation@ Tc=25℃ PPAK5x6 83 Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Case (TO-220/TO-220F) RθJC 1.2 ℃/W Thermal Resistance-Junction to Case (TO-251S/TO-252) RθJC 1.35 ℃/W Thermal Resistance-Junction to Case (PPAK5x6) RθJC 1.5 ℃/W Note : The maximum current rating is package limited at 120A for TO-220-3L The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 70A for TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=250uA 60 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=250uA 2.0 4.0 Gate Leakage Current IGSS VDS=0V ,VGS=±20 ±100 nA Zero Gate V oltage Drain Current IDSS VDS=48V ,VGS=0V 1 uA VDS=48V ,VGS=0V TJ=100℃ 100 Gate Resistance RG VGS=0V,VDS Open, f=1MHz 1.9 Ω Drain-Source On-Resistance RDS(on) VGS=10V ,ID=15A 4.1 5.3 mΩ Forward Transconductance gfs VDS=5V ,ID=20A 60 S Diode Forward V oltage VSD IS=20A,VGS =0V 0.9 1.2 V Dynamic Total Gate Charge Qg VDS=30V ,VGS=10V ID=20A nC Gate-Source Charge Qgs 11 Gate-Drain Charge Qgd 7 Input Capacitance Ciss VDS=30V ,VGS=0V f=1MHz 2207 pF Output Capacitance Coss 660 Reverse Transfer Capacitance Crss 24 Turn-On Time td(on) VDD=30V, ID=20A,VGS=10V RG=10Ω nS tr 7 Turn-Off Time td(off) 34 tf 8
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may re sult from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all inf ormation previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com