SPN8910 SYNC-POWER | Alldatasheet

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2010/12/09 Preliminary Page 1 SP N 8910 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN8910 is the N-Channel logic enhancement mod e power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8910 has been designed specifically to improve the overall efficienc y of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. High Frequency Small Power Switching forMB/NB/VGA Network DC/DC Power System Load Switch FEATURES PIN CONFIGURATION SOT-89 1 2 3 G D S PART MARKING 100V/2A,R DS(ON) = 320mΩ@V GS = 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-89 package design SPN8910 AAAAAA BBBBBB

2010/12/09 Preliminary Page 2 SP N 8910 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 D Drain

3 S Source

ORDERING INFORMATION

Part Number Package Part Marking SPN8910S89RGB SOT-89 SPN8910 SPN8910S89TGB SOT-89 SPN8910 ※ SPN8910S89RGB : Tape Reel ; Pb – Free ; Halogen - Free ※ SPN8910S89TGB : Tube ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A =25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 100 V Gate –Source V oltage V GSS ±20 V TA =25℃ 2.2 Continuous Drain Current(T J=150 )℃ TA =70℃ ID 1.7 A Pulsed Drain Current IDM 5.5 A Power Dissipation T A =25℃ P D 1.5 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 85 /W ℃

2010/12/09 Preliminary Page 3 SP N 8910 N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

A =25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =250uA 100 Gate Threshold V oltage V GS(th) V DS =V GS ,I D =250uA 1 2.0 2.5 V Gate Leakage Current I GSS V DS =0V ,V GS =±20V ±100 nA V DS =80V ,V GS =0V 1 Zero Gate V oltage Drain Current I DSS V DS =80V ,V GS =0V TJ=55℃ 5 uA On-State Drain Current I D(on) V DS ≥5V ,V GS =10V 2.2 A Forward Transconductance gfs V DS =5V ,I D =2A 2.4 S Diode Forward V oltage V SD I S=1A,V GS =0V 1.2 V Dynamic Total Gate Charge Q g 9 13 Gate-Source Charge Q gs 2 Gate-Drain Charge Q gd V DS =50V ,V GS =10V ID = 2A 1.4 nC Input Capacitance C iss 508 Output Capacitance C oss 29 Reverse Transfer Capacitance C rss V DS =15V ,V GS =0V f=1MHz 16.5 pF td(on) 2 Turn-On Time tr 21.5 td(off) 11.2 Turn-Off Time tf V DD =50V , ID =2A, V GEN =10V , RG =3.3 Ω 18.8 nS

2010/12/09 Preliminary Page 4 SP N 8910 N-Channel Enhancement Mode MOSFET SOT-89 PACKAGE OUTLINE

2010/12/09 Preliminary Page 5 SP N 8910 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com