SPN8866DN8RGB SYNC-POWER | Alldatasheet

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Technical content

N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN8866 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on -state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching is required.  DC/DC Converter  Load Switch  Synchronous Buck Converter FEATURES PIN CONFIGURATION (PPAK5x6-8L)  80V/80A,RDS(ON)=6.0mΩ@VGS=10V  80V/80A,RDS(ON)=8.5mΩ@VGS=4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK5x6-8L package design PART MARKING

N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 S Source

2 S Source

3 S Source

4 G Gate

5 D Drain

6 D Drain

7 D Drain

8 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN8866DN8RGB PPAK5x6-8L SPN8866 ※ SPN8866DN8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS 80 V Gate –Source V oltage VGSS +20/-14 V Continuous Drain Current(TJ=150℃) TC=25℃ ID A TC=70℃ 58 Pulsed Drain Current IDM 230 A Avalanche Current IAS 58 A Power Dissipation TC=25℃ PD W TA=70℃ 1.6 Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Case RθJC 1.5 ℃/W

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=250uA 80 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=250uA 1.2 2.3 Gate Leakage Current IGSS VDS=0V ,VGS=+20V/-14V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=64V ,VGS=0V 1 uA VDS=64V ,VGS=0V TJ=85℃ 10 On-State Drain Current ID(on) VDS≥5V ,VGS =10V 80 A Drain-Source On-Resistance RDS(on) VGS=10V ,ID=15A 6 mΩ VGS=4.5V ,ID=10A 8.5 Forward Transconductance gfs VDS=10V ,ID=5A 10 S Diode Forward V oltage VSD IS=1A,VGS =0V 1 V Dynamic Total Gate Charge Qg VDS=64V ,VGS=10V ID=10A nC Gate-Source Charge Qgs 7.5 Gate-Drain Charge Qgd 12 Input Capacitance Ciss VDS=25V ,VGS=0V f=1MHz 2600 pF Output Capacitance Coss 350 Reverse Transfer Capacitance Crss 20 Turn-On Time td(on) VDD=40V, ID=1A,VGS=10V RG=6Ω nS tr 7 Turn-Off Time td(off) 36 tf 9

N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publi cation surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com