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2014/03/19 V.1 Page 1 SPN80T06 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN80T06 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, notebook computer power management and other battery powered circuits.  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier FEATURES PIN CONFIGURATION TO-220-3L TO-263-2L TO-262-3L PART MARKING TO-220-3L TO-263-2L TO-262-3L  60V/80A, RDS(ON)= 8mΩ@VGS= 10V R DS(ON)= 10mΩ@VGS= 5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-263-2L/TO-262-3L package design

2014/03/19 V.1 Page 2 SPN80T06 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 D Drain

3 S Source

ORDERING INFORMATION

Part Number Package Part Marking SPN80T06T220TGB TO-220-3L SPN80T06 SPN80T06T262RGB TO-263-2L SPN80T06 SPN80T06K262TGB TO-262-3L SPN80T06 ※ SPN80T06T220TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN80T06T262RGB : Tape&Reel ; Pb – Free ; Halogen - Free ※ SPN80T06K262TGB : Tube ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage VDSS 60 V Gate –Source V oltage VGSS ±20 V TA=25℃ 80 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID 55 A Pulsed Drain Current I DM 320 A TA=25℃ 268 Power Dissipation TA=70℃ PD 134 W Avalanche Energy with Single Pulse ( Tj=25℃, L = 1mH , IAS = 22A , VDS =100V. ) EAS 320 mJ Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 62.5 ℃/W

2014/03/19 V.1 Page 3 SPN80T06 N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 60 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 3.0 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=60V , VGS=0V 10 Zero Gate V oltage Drain Current I DSS VDS=48V , VGS=0V TJ = 150 °C 100 uA VGS= 10V ,ID=30A 6.5 8 Drain-Source On-Resistance R DS(on) VGS= 5V ,ID=20A 8.5 10 mΩ Diode Forward V oltage V SD I S=1A,VGS =0V 1.0 V Dynamic Total Gate Charge Q g 76 Gate-Source Charge Q gs 17 Gate-Drain Charge Q gd VDS=30V , VGS=10V ID = 30A nC Input Capacitance C iss 3500 Output Capacitance C oss 319 Reverse Transfer Capacitance C rss VDS=30V , VGS=0V f=1MHz 236 pF td(on) 18 Turn-On Time tr 35 td(off) 44 Turn-Off Time tf VDD=30V , RL=1Ω VGEN=10V , RG=3Ω nS

2014/03/19 V.1 Page 4 SPN80T06 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2014/03/19 V.1 Page 5 SPN80T06 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2014/03/19 V.1 Page 6 SPN80T06 N-Channel Enhancement Mode MOSFET TO-220-3L PACKAGE OUTLINE Millimeter Inch Symbol Min Max Min Max A 4.4 4.6 0.173 0.181 A1 2.23 2.53 0.088 0.100 b2 0.75 0.85 0.030 0.033 b1 1.17 1.42 0.046 0.056 c2 0.4 0.6 0.016 0.024 c1 1.2 1.4 0.047 0.055 D 9.85 10.15 0.388 0.400 E 8.96 9.46 0.353 0.372 E1 15.5 15.95 0.610 0.628 e 2.54REF 0.1REF e1 5.08REF 0.2REF F 2.7 2.9 0.106 0.114 h 0 0.3 0.000 0.012 L 12.7 13.65 0.500 0.537 L1 3.2 0.126

2014/03/19 V.1 Page 7 SPN80T06 N-Channel Enhancement Mode MOSFET TO-263-2L PACKAGE OUTLINE

2014/03/19 V.1 Page 8 SPN80T06 N-Channel Enhancement Mode MOSFET TO-262-3L PACKAGE OUTLINE Millimeter Inch Symbol Min Max Min Max A 4.4 4.8 0.173 0.189 b 0.76 1 0.030 0.039 D 8.6 9 0.339 0.354 c 0.36 0.5 0.014 0.020 E 9.8 10.4 0.386 0.409 c2 1.25 1.45 0.049 0.057 b2 1.17 1.47 0.046 0.058 L 13.25 14.25 0.522 0.561 e 2.54REF 0.1REF L2 1.27REF 0.05REF

2014/03/19 V.1 Page 9 SPN80T06 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2014 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com