SPN75T04T220FTGB SYNC-POWER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN75T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on -state resi stance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool FEATURES PIN CONFIGURATION 45V/75A,RDS(ON)=9.5mΩ@VGS=10V 45V/75A,RDS(ON)=14mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220F-3L/TO-251S-3L/TO-252-2L/ PPAK5x6-8L package design TO-220F TO-251 TO-252 PPAK5x6 PART MARKING
N-Channel Enhancement Mode MOSFET PIN DESCRIPTION (T0-220F-3L/TO-252-2L/TO-251S-3L) Pin Symbol Description
1 G Gate
2 D Drain
3 S Source
PIN DESCRIPTION (PPAK5x6-8L) Pin Symbol Description
1 S Source
2 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPN75T04T220FTGB TO-220F-3L SPN75T04 SPN75T04ST251TGB TO-251S-3L SPN75T04 SPN75T04T252RGB TO-252-2L SPN75T04 SPN75T04DN8RGB PPAK5x6-8L SPN75T04 ※ SPN75T04T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN75T04ST251TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN75T04T252RGB : Tape&Reel ; Pb – Free ; Halogen – Free ※ SPN75T04DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free
N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS 45 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current (TO-220F/TO-251/TO-252) TC=25℃ ID A TC=100℃ 58 Continuous Drain Current (PPAK5x6) TC=25℃ ID A TC=100℃ 39 Pulsed Drain Current IDM 280 A Power Dissipation @ TC=25℃ TO-220F-3L/TO-252-2L/TO-251S-3L PD W Power Dissipation @ TC=25℃ PPAK5x6-8L 83 Avalanche Energy with Single Pulse ( TC=25℃, L = 0.4mH. ) EAS 20 mJ Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Case (TO-220F-3L) RθJC 1.2 ℃/W Thermal Resistance-Junction to Case (TO-252-2L/TO-251S-3L) RθJC 1.35 ℃/W Thermal Resistance-Junction to Case (PPAK5x6-8L) RθJC 1.5 ℃/W Note : The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 70A for TO-251S-3L and TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=250uA 45 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=250uA 1.0 1.55 2.2 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=36V ,VGS=0V,TJ=25°C 1 uA VDS=36V ,VGS=0V,TJ=100°C 100 Drain-Source On-Resistance RDS(on) VGS=10V ,ID=15A 7.5 9.5 mΩ VGS=4.5V ,ID=8A 10 14 Forward Transconductance gfs VDS=5V ,ID=10A 25 S Gate Resistance RG VGS=0V ,VDS=Open,f=1MHz 1.5 Ω Diode Forward V oltage VSD IS=20A,VGS=0V 0.9 1.2 V Dynamic Total Gate Charge (10V) Qg VDS=20V, VGS=10V ID=10A 14.5 nC Total Gate Charge (4.5V) Qg 7 Gate-Source Charge Qgs 2 Gate-Drain Charge Qgd 2.5 Input Capacitance Ciss VDS=20V , VGS=0V f=1MHz 942 pF Output Capacitance Coss 309 Reverse Transfer Capacitance Crss 29 Turn-On Time td(on) VDD=20V, ID=10A,VGS=10V RG=10Ω nS tr 5 Turn-Off Time td(off) 21 tf 5 Gate resistance Rg VGS=0V ,VDS=0V , f=1MHz 1.5 Ω
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility f or the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No li cense is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied . SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com