SPN7510 SYNC-POWER | Alldatasheet

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2009/06/15 Ver.1 Page 1 SPN7510 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN7510 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . z DC/DC Converter z Load Switch z SMPS Secondary Side Synchronous Rectifier FEATURES PIN CONFIGURATION( TO-220-3L ) PART MARKING ‹ 100V/30A,RDS(ON)= 16mΩ@VGS= 10V ‹ 100V/16A,RDS(ON)= 21mΩ@VGS= 4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TO-220-3L package design

2009/06/15 Ver.1 Page 2 SPN7510 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 D Drain

3 S Source

ORDERING INFORMATION

Part Number Package Part Marking SPN7510T220TGB TO-220-3L SPN7510 ※ SPN7510T220TGB : Tube ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 100 V Gate –Source V oltage V GSS ±20 V TA=25℃ 72 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID 45 A Pulsed Drain Current I DM 240 A TA=25℃ 130 Power Dissipation TA=70℃ PD 3.38 W Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.12mH , IAS = 75A , VDD = 80V. ) EAS 335 mJ Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 2 ℃/W

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ELECTRICAL CHARACTERISTICS

(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 100 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 3.0 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=100V ,VGS=0V 10 Zero Gate V oltage Drain Current I DSS VDS=80V ,VGS=0V TJ = 150 °C 100 uA VGS= 10V ,ID=30A 16 Drain-Source On-Resistance R DS(on) VGS= 4.5V ,ID=16A 21 mΩ Forward Transconductance gfs V DS=10V ,ID=30A 52 S Diode Forward V oltage V SD I S=30A,VGS =0V 1.3 V Dynamic Total Gate Charge Q g 69 111 Gate-Source Charge Q gs 12 Gate-Drain Charge Q gd VDS=80V ,VGS=4.5V ID= 30A nC Input Capacitance C iss 5690 9100 Output Capacitance C oss 540 Reverse Transfer Capacitance C rss VDS=25VGS=0V f=1MHz 605 pF td(on) 12 Turn-On Time tr 75 td(off) 220 Turn-Off Time tf VDD=50V ,RL=1.6Ω ID≡30A,VGEN=10V RG=10Ω 250 nS

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2009/06/15 Ver.1 Page 7 SPN7510 N-Channel Enhancement Mode MOSFET TO-220-3L PACKAGE OUTLINE

2009/06/15 Ver.1 Page 8 SPN7510 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com