SPN7002U SYNC-POWER | Alldatasheet

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2011/08/18 Ver.1 Page 1 SPN7002U N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN7002U is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. z Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. z High saturation current capability. Direct Logic-Level Interface: TTL/CMOS z Battery Operated Systems z Solid-State Relays FEATURES PIN CONFIGURATION(SOT-323) PART MARKING ‹ 60V/0.50A , RDS(ON)= 2.0Ω@VGS=10V ‹ 60V/0.20A , RDS(ON)= 4.0Ω@VGS=4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOT-323 package design

2011/08/18 Ver.1 Page 2 SPN7002U N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN7002US32RGB SOT-323 1UXX ※ SPN7002US32RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (T A=25 Unless otherwise℃ noted) Parameter Symbol Typical Unit Drain-Source V oltage V DSS 60 V Gate –Source V oltage - Continuous V GSS ±20 V Continuous Drain Current(TJ=150 )℃ T A=25℃ I D 0.64 A Pulsed Drain Current (∗) IDM 0.95 A Power Dissipation T A=25℃ P D 1.35 W Operating Junction Temperature T J -55 ~ 150 ℃ Storage Temperature Range T STG -55 ~ 150 ℃ Thermal Resistance-Junction to Ambient R θJA 375 /W ℃ (∗) Pulse width limited by safe operating area

2011/08/18 Ver.1 Page 3 SPN7002U N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted℃ ) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250Ua 60 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 1.7 2.5 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±30 uA VDS=60V ,VGS=0V TJ=25℃ 10 Zero Gate V oltage Drain Current I DSS VDS=48V ,VGS=0V TJ=70℃ 100 uA VGS=10V ,ID=0.50A 2.0 Drain-Source On-Resistance R DS(on) VGS= 4.5V ,ID=0.20A 4.0 Ω Forward Transconductance Gfs(1) V DS = 10 V, ID = 0.6 A 0.6 S Diode Forward V oltage V SD(1) V GS = 0 V, IS = 0.45A 1.2 V Dynamic Total Gate Charge Q g 1.0 1.6 Gate-Source Charge Q gs 0.5 Gate-Drain Charge Q gd VDD = 50 V, ID = 0.6 A, VGS = 4.5 V 0.5 nC Input Capacitance C iss 32 50 Output Capacitance C oss 8 Reverse Transfer Capacitance C rss VDS = 25 V, f = 1 MHz, VGS = 0 pF td(on) 12 Turn-On Time tr 10 td(off) 56 Turn-Off Time tf VDD = 30 V, ID = 0.6 A RG = 3.3Ω VGS = 10.0 V RD = 52Ω ns (1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area.

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2011/08/18 Ver.1 Page 7 SPN7002U N-Channel Enhancement Mode MOSFET SOT-323 PACKAGE OUTLINE

2011/08/18 Ver.1 Page 8 SPN7002U N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com

2011/08/18 Ver.1 Page 9 SPN7002U N-Channel Enhancement Mode MOSFET