SPN68T10T220TGB SYNC-POWER | Alldatasheet
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Technical content
N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN68T10 is the N-Channel enhancement mod e power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on -state resistance. These devices are particularly sui table for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Power Tool Motor Control
FEATURES
100V/68A,RDS(ON)=14mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L and TO-252-2L package design PIN CONFIGURATION TO-220-3L TO-252-2L PART MARKING
N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 D Drain
3 S Source
ORDERING INFORMATION
Part Number Package Part Marking SPN68T10T220TGB TO-220-3L SPN68T10 SPN68T10T252RGB TO-252-2L SPN68T10 ※ SPN68T10T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN68T10T252RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS 100 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current(Silicon Limited) TC=25℃ ID 75 A TC=70℃ 60 Pulsed Drain Current IDM 301 A Power Dissipation@ TC=25℃ PD 166.7 W Avalanche Energy with Single Pulse ( Tj=25℃, L=0.1mH , IAS=15A , VDD=25V , VGS=10V) EAS 113 mJ Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Case (TO-220-3L) RθJC 1.2 ℃/W Thermal Resistance-Junction to Case (TO-252-2L) RθJC 1.35 ℃/W Note : The maximum current rating is package limited at 120A for TO-220-3L The maximum current rating is package limited at 70A for TO-252-2L
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=250uA 100 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=250uA 2.0 4.0 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=80V ,VGS=0V TJ=25°C 1 uA VDS=80V ,VGS=0V TJ = 55°C 5 Drain-Source On-Resistance RDS(on) VGS=10V ,ID=30A 12.5 14 mΩ Diode Forward V oltage VSD IS=1A,VGS=0V 0.6 1.2 V Dynamic Total Gate Charge Qg VDS=50V ,VGS=10V ID=11.5A nC Gate-Source Charge Qgs 9 Gate-Drain Charge Qgd 6 Input Capacitance Ciss VDD=30V ,VGS=0V f=1MHz 2342 pF Output Capacitance Coss 702 Reverse Transfer Capacitance Crss 38 Turn-On Time td(on) VDD=50V, ID=30A,VGS=10V RG=6Ω 8.4 nS tr 30.3 Turn-Off Time td(off) 25.4 tf 12.8
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from i ts use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com