SPN6561_09 SYNC-POWER | Alldatasheet
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Technical content
2009/12/05 Ver.2 Page 1 SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter
FEATURES
PIN CONFIGURATION( SOT-23-6L ) PART MARKING N-Channel 30V/2.8A,RDS(ON)= 60m Ω@VGS=10V 30V/2.3A,RDS(ON)= 80m Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design
2009/12/05 Ver.2 Page 2 SPN6561 Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G1 Gate 1
2 S2 Source 2
3 G2 Gate 2
4 D2 Drain 2
5 S1 Source 1
6 D1 Drain1
ORDERING INFORMATION
Part Number Package Part Marking SPN6561S26RG SOT-23-6L 61YW SPN6561S26RGB SOT-23-6L 61YW ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN6561S26RG : Tape Reel ; Pb – Free ※ SPN6561S26RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 30 V Gate –Source V oltage V GSS ±20 V TA=25℃ 2.8 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID 2.3 A Pulsed Drain Current I DM 10 A Continuous Source Current(Diode Conduction) I S 1.25 A TA=25℃ 1.15 Power Dissipation TA=70℃ PD 0.75 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ T ≤ 10sec 50 Thermal Resistance-Junction to Ambient Steady State RθJA 90 ℃/W
2009/12/05 Ver.2 Page 3 SPN6561 Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 30 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 3.0 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=30V ,VGS=1.0V 1 Zero Gate V oltage Drain Current I DSS VDS=30V ,VGS=0.0V TJ=55℃ 10 uA VDS≧4.5V ,VGS=10V 6 On-State Drain Current I D(on) VDS≧4.5V ,VGS=4.5V 4 A VGS = 10V ,ID=2.8A 0.043 0.060Drain-Source On-Resistance R DS(on) VGS =4.5V ,ID=2.1A 0.056 0.080 Ω Forward Transconductance gfs V DS=4.5V ,ID=2.5A 4.6 S Diode Forward V oltage V SD I S=1.25A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Q g 4.5 10 Gate-Source Charge Q gs 0.8 Gate-Drain Charge Q gd VDS=15VGS=10V ID≡2.5 1.0 nC Input Capacitance C iss 240 Output Capacitance C oss 110 Reverse Transfer Capacitance C rss VDS=15VGS=0V f=1MHz pF td(on) 8 20 Turn-On Time tr 12 30 td(off) 17 35 Turn-Off Time tf VDD=15RL=15 ID≡1.0A,VGEN=10 RG=6Ω 8 20 ns
2009/12/05 Ver.2 Page 4 SPN6561 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2009/12/05 Ver.2 Page 5 SPN6561 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2009/12/05 Ver.2 Page 6 SPN6561 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2009/12/05 Ver.2 Page 7 SPN6561 Dual N-Channel Enhancement Mode MOSFET SOT-23-6L PACKAGE OUTLINE
2009/12/05 Ver.2 Page 8 SPN6561 Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com