SPN6099 SYNC-POWER | Alldatasheet

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2009 / 04 / 10 Ver.1 Page 1 SPN6099 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN6099 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . z DC/DC Converter z Load Switch z SMPS Secondary Side Synchronous Rectifier FEATURES PIN CONFIGURATION( TO-220-3L ) PART MARKING ‹ 60V/80A,RDS(ON)= 4.0mΩ@VGS= 10V ‹ 60V/20A,RDS(ON)= 4.2mΩ@VGS= 6.0V ‹ 60V/10A,RDS(ON)= 4.4mΩ@VGS=4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TO-220-3L package design

2009 / 04 / 10 Ver.1 Page 2 SPN6099 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 D Drain

3 S Source

ORDERING INFORMATION

Part Number Package Part Marking SPN6099T220TGB TO-220-3L SPN6099 ※ SPN6099T220TGB: Tube ; Pb – Free; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 60 V Gate –Source V oltage V GSS ±20 V TA=25℃ 80 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID A Pulsed Drain Current I DM 420 A Avalanche Current I AS 75 A TA=25℃ 62.5 Power Dissipation TA=70℃ PD 3.38 W Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.12mH , IAS = 80A , VDD = 48V. ) EAS 380 mJ Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 2 ℃/W

2009 / 04 / 10 Ver.1 Page 3 SPN6099 N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 60 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 2.5 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=60V ,VGS=0V 1 Zero Gate V oltage Drain Current I DSS VDS=60V ,VGS=0V TJ = 150 °C 250 uA On-State Drain Current I D(on) V DS≥5V ,VGS =10V 70 A VGS= 10V ,ID=80A 3.6 4.0 VGS= 6.0V ,ID=20A 3.8 4.2 Drain-Source On-Resistance R DS(on) VGS= 4.5V ,ID=10A 4.0 4.4 mΩ Forward Transconductance gfs V DS=15V ,ID=20A 60 S Diode Forward V oltage V SD I S=30A,VGS =0V 1.5 V Dynamic Total Gate Charge Q g 100 Gate-Source Charge Q gs 28 Gate-Drain Charge Q gd VDS=30V ,VGS=10V ID= 80A nC Input Capacitance C iss 6000 Output Capacitance C oss 900 Reverse Transfer Capacitance C rss VDS=30VGS=0V f=1MHz 320 pF td(on) 25 35 Turn-On Time tr 15 25 td(off) 35 55 Turn-Off Time tf VDD=30V ,RL=0.4Ω ID≡80A,VGEN=10V RG=1.0Ω 8 15 nS

2009 / 04 / 10 Ver.1 Page 4 SPN6099 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

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2009 / 04 / 10 Ver.1 Page 7 SPN6099 N-Channel Enhancement Mode MOSFET TO-220-3L PACKAGE OUTLINE

2009 / 04 / 10 Ver.1 Page 8 SPN6099 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com