SPN6098 SYNC-POWER | Alldatasheet

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2012 / 08 / 13 Ver.1 Page 1 SP N6098 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN6098 is the N- Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for most of synchronous buck converter applications. DC/DC Converter Load Switch Synchronous Buck Converter

FEATURES

PIN CONFIGURATION( TO-220-3L ) PART MARKING 60V/60A, RDS(ON) = 12mΩ@V GS = 10V 60V/60A, RDS(ON) = 15.0mΩ@V GS =4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design

2012 / 08 / 13 Ver.1 Page 2 SP N6098 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 D Drain

3 S Source

ORDERING INFORMATION

Part Number Package Part Marking SPN6098T220TG TO-220-3L SPN6098 SPN6098T220TGB TO-220-3L SPN6098 ※ SPN6098T220TG: Tube ; Pb – Free ※ SPN6098T220TGB: Tube ; Pb – Free; Halogen – Free ABSOULTE MAXIMUM RATINGS (T A =25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 60 V Gate –Source V oltage V GSS ±20 V TA =25℃ 60 Continuous Drain Current(T J=150 )℃ TA =100℃ ID A Pulsed Drain Current IDM 120 A Avalanche Current IAS 38 A Power Dissipation T A =25℃ P D 62 W Avalanche Energy with Single Pulse ( Tj=25 ℃, L = 0.1mH , I AS = 38A , V DD = 25V. ) EAS 123 mJ Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 62 /W ℃

2012 / 08 / 13 Ver.1 Page 3 SP N6098 N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

A =25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =250uA 60 Gate Threshold V oltage V GS(th) V DS =V GS ,I D =250uA 1.0 2.5 V Gate Leakage Current I GSS V DS =0V ,V GS =±20V ±100 nA V DS =48V ,V GS =0V 1 Zero Gate V oltage Drain Current I DSS V DS =48V ,V GS =0V TJ = 55 °C 5 uA On-State Drain Current I D(on) V DS ≥5V ,V GS =10V 60 A V GS = 10V ,I D =15A 10 12 Drain-Source On-Resistance R DS(on) V GS = 4.5V ,I D =10A 12 15 m Ω Forward Transconductance gfs V DS =5V ,I D =15A 47 S Diode Forward V oltage V SD I S=60A,V GS =0V 1.2 V Dynamic Total Gate Charge Q g 24 Gate-Source Charge Q gs 6.9 Gate-Drain Charge Q gd V DS =48V ,V GS =4.5V ID = 12A nC Input Capacitance C iss 3200 Output Capacitance C oss 210 Reverse Transfer Capacitance C rss V DS =15V ,VGS =0V f=1MHz 145 pF td(on) 20 Turn-On Time tr 4 td(off) 84.5 Turn-Off Time tf V DD =30V , ID =2A, V GEN =10V , RG =3.3 Ω 6.5 nS

2012 / 08 / 13 Ver.1 Page 4 SP N6098 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 O n-Resistance vs. Gate Voltage Fig. 3 Forward Characteristics Fig. 4 Gate Ch arge Characteristics Reverse Diodes Fig. 5 Vgs vs. Junction Temperature Fig. 6 On- Resistance vs. Temperature

2012 / 08 / 13 Ver.1 Page 5 SP N6098 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics F ig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform Fig. 11 Uncla mped Inductive Waveform

2012 / 08 / 13 Ver.1 Page 6 SP N6098 N-Channel Enhancement Mode MOSFET TO-220-3L PACKAGE OUTLINE

2012 / 08 / 13 Ver.1 Page 7 SP N6098 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1 Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com