SPN6001 SYNC-POWER | Alldatasheet

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2012/07/12 Ver.1 Page 1 SP N 6001 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN6001 is the N- Channel enhancement mode field effect transistors that are produced using high cell density DMOS technology. High efficiency SMPS AC adapter Electronic Lamp Ballast FEATURES PIN CONFIGURATION(TO-92) PART MARKING 600V/1.0A , RDS(ON) = 15 Ω@V GS =10V TO-92 package design Fast switch, Low Ciss, Low gate charge

2012/07/12 Ver.1 Page 2 SP N 6001 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 D Drain

3 S Source

ORDERING INFORMATION

Part Number Package Part Marking SPN6001T92AGB TO-92 SPN6001 ※ Week Code : 01~53 ※ SPN6001T92AGB : Tape Ammo ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (T A =25 Unless otherwise℃ noted) Parameter Symbol Typical Unit Drain-Source V oltage V DSS 600 V Gate –Source V oltage - Continuous V GSS ±20 V Gate –Source V oltage - Non Repetitive ( tp < 50 µs) V GSS ±40 V Continuous Drain Current(T J=150 )℃ T A =25℃ I D 1 A Pulsed Drain Current ( ∗∗ ∗∗) IDM 2.5 A Power Dissipation T A =25℃ P D 3 W Operating Junction Temperature T J -55 ~ 150 ℃ Storage Temperature Range T STG -55 ~ 150 ℃ Thermal Resistance-Junction to Ambient R θJA 120 /W ℃ (∗∗ ∗∗) Pulse width limited by safe operating area

2012/07/12 Ver.1 Page 3 SP N 6001 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T A =25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =250uA 600 Gate Threshold V oltage V GS(th) V DS =V GS ,I D =250uA 2.0 4.0 V Gate Leakage Current I GSS V DS =0V ,V GS =±20V ±100 nA Zero Gate V oltage Drain Current I DSS V DS =480V , VGS =0V 10 uA Drain-Source On-Resistance R DS(on) V GS =10V , ID =500mA 15 Ω Forward On V oltage V SD V GS =0V , ID =500mA 1 V Forward Transconductance Gfs V DS = 40 V, I D = 500 mA 0.8 S Dynamic Total Gate Charge Q g 6.1 7.2 Gate-Source Charge Q gs 1.0 Gate-Drain Charge Q gd V DD = 480 V, I D = 1 A, V GS = 10 V 3.0 nC Input Capacitance C iss 178 221 Output Capacitance C oss 19 27 Reverse Transfer Capacitance C rss V DS = 25 V, f = 1 MHz, V GS = 0 3.7 4.8 pF td(on) 15 Turn-On Time tr 46 td(off) 26 Turn-Off Time tf V DD = 300 V, I D = 1 A R G = 25 Ω ns (1) Pulsed: Pulse duration = 300 µs, duty cycle 2 %. (2) Pulse width limited by maximum junction temperature.

2012/07/12 Ver.1 Page 4 SP N 6001 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 Tr ansfer Characteristics Fig. 3 BVdss vs Junction Temperature Fig. 4 On- Resistance vs Junction Temperature Fig. 5 Forward Characteristic of Reverse Diode Fi g. 6 On-Resistance vs Drain Current

2012/07/12 Ver.1 Page 5 SP N 6001 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Gate Charge Characteristics Fig. 8 Typi cal Capacitance Characteristics Fig. 9 Maximum Safe Operation Area Fig. 10 Effe ctive Transient Thermal Impedance

2012/07/12 Ver.1 Page 6 SP N 6001 N-Channel Enhancement Mode MOSFET TO-92 PACKAGE OUTLINE Dimension in mm

2012/07/12 Ver.1 Page 7 SP N 6001 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1 Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com