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2013/09/04 Ver.2 Page 1 SPN5001 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN5001 is the N-Channel logic enhancement mode power field effect transistor which is produced with high voltage BiCMOS technology. This device is particularly suited for reducing the no load consumption in PC power, TV power and Adapter.  Desk PC Power Supply  AC adapter  LCD TC Power Supply FEATURES PIN CONFIGURATION(SOT-23)  600V/27mA , RDS(ON)= 300Ω@VGS=10V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PART MARKING 501YW YW: Date Code

2013/09/04 Ver.2 Page 2 SPN5001 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN5001S23RGB SOT-23 501YW ※ SPN5001S23RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (T A=25 Unless otherwise℃ noted) Parameter Symbol Typical Unit Drain-Source V oltage V DSS 600 V Gate –Source V oltage - Continuous V GSS ±20 V Continuous Drain Current T A=25℃ I D 27 mA Power Dissipation T A=25℃ P D 0.5 W Operating Junction Temperature T J -55 ~ 150 ℃ Storage Temperature Range T STG -55 ~ 150 ℃ Thermal Resistance-Junction to Ambient R θJA 250 /W ℃

2013/09/04 Ver.2 Page 3 SPN5001 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 600 V Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 3.0 4.5 Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current I DSS VDS=480V ,VGS=0V TJ=25℃ 25 uA Drain-Source On-Resistance R DS(on) VGS=10V ,ID=16mA 300 Ω Forward Transconductance Gfs(1) V DS = 10 V, ID =16mA 28 mS Dynamic Total Gate Charge Q g VDD = 200 V, ID = 0.1 A, VGS = 10 V 1.8 2.5 3.2 nCGate-Source Charge Q gs 1.3 Gate-Drain Charge Q gd 0.8 Input Capacitance C iss VDS = 25 V, f = 1 MHz, VGS = 0 8.8 12.5 16.2 pFOutput Capacitance C oss 7 10 13 Reverse Transfer Capacitance C rss 5 7 9 Turn-On Time td(on) VDS = 300 V, ID = 10m A RG = 3.3Ω VGS = 10.0 V RD = 30kΩ 11.5 ns tr 14.5 Turn-Off Time td(off) 14 tf 120

2013/09/04 Ver.2 Page 4 SPN5001 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2013/09/04 Ver.2 Page 5 SPN5001 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2013/09/04 Ver.2 Page 6 SPN5001 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2013/09/04 Ver.2 Page 7 SPN5001 N-Channel Enhancement Mode MOSFET SOT-23 PACKAGE OUTLINE

2013/09/04 Ver.2 Page 8 SPN5001 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com