SPN4920 SYNC-POWER | Alldatasheet
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Technical content
2007/ 07/ 17 Ver.2 Page 1 SPN4920 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN4920 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter
FEATURES
PIN CONFIGURATION(SOP – 8P) PART MARKING 30V/7.2A,RDS(ON)= 28mΩ@VGS= 10V 30V/6.0A,RDS(ON)= 36mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design
2007/ 07/ 17 Ver.2 Page 2 SPN4920 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 S1 Source 1
2 G1 Gate 1
3 S2 Source 2
4 G2 Gate 2
5 D2 Drain 2
6 D2 Drain 2
7 D1 Drain 1
8 D1 Drain 1
ORDERING INFORMATION
Part Number Package Part Marking SPN4920S8RG SOP- 8P SPN4920 SPN4920S8TG SOP- 8P SPN4920 ※ SPN4920S8RG : 13” Tape Reel ; Pb – Free ※ SPN4920S8TG : Tube ; Pb – Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 30 V Gate –Source V oltage V GSS ±20 V TA=25℃ 7.2 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID 6.0 A Pulsed Drain Current I DM 35 A Continuous Source Current(Diode Conduction) I S 1.7 A TA=25℃ 2.8 Power Dissipation TA=70℃ PD 1.8 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 65 ℃/W
2007/ 07/ 17 Ver.2 Page 3 SPN4920 N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25 Unless oth℃ erwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 30 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 3.0 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=30V ,VGS=0V 1 Zero Gate V oltage Drain Current I DSS VDS=30V ,VGS=0V TJ=85℃ 5 uA On-State Drain Current I D(on) V DS≥5V ,VGS =10V 20 A VGS= 10V ,ID=7.2A 0.022 0.028Drain-Source On-Resistance R DS(on) VGS=4.5V ,ID=6.0A 0.030 0.036 Ω Forward Transconductance gfs V DS=15V ,ID=6.2A 13 S Diode Forward V oltage V SD I S=2.3A,VGS =0V 0.8 1.2 V Dynamic Total Gate Charge Q g 30 50 Gate-Source Charge Q gs 7.5 Gate-Drain Charge Q gd VDS=15V ,VGS=10V ID= 7.2A 3.5 nC Input Capacitance C iss 450 Output Capacitance C oss 240 Reverse Transfer Capacitance C rss VDS=15VGS=0V f=1MHz pF td(on) 12 20 Turn-On Time tr 10 20 td(off) 60 90 Turn-Off Time tf VDD=15V ,RL=15Ω ID≡1.0A,VGEN=10V RG=6Ω 15 30 nS
2007/ 07/ 17 Ver.2 Page 4 SPN4920 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2007/ 07/ 17 Ver.2 Page 5 SPN4920 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2007/ 07/ 17 Ver.2 Page 6 SPN4920 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2007/ 07/ 17 Ver.2 Page 7 SPN4920 N-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE
2007/ 07/ 17 Ver.2 Page 8 SPN4920 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com