SPN4906 SYNC-POWER | Alldatasheet
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Technical content
2009/07/20 Ver.1 Page 1 SPN4906 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN4906 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter
FEATURES
PIN CONFIGURATION(SOP – 8P) PART MARKING N-Channel 40V/6.0A,RDS(ON)= 45mΩ@VGS= 10V 40V/5.0A,RDS(ON)= 54mΩ@VGS= 4.5V 40V/4.5A,RDS(ON)= 83mΩ@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design
2009/07/20 Ver.1 Page 2 SPN4906 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 S1 Source 1
2 G1 Gate 1
3 S2 Source 2
4 G2 Gate 2
5 D2 Drain 2
6 D2 Drain 2
7 D1 Drain 1
8 D1 Drain 1
ORDERING INFORMATION
Part Number Package Part Marking SPN4906S8RGB SOP- 8P SPN4906 ※ SPN4906S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 40 V Gate –Source V oltage V GSS ±20 V TA=25℃ 6.0 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID 5.0 A Pulsed Drain Current I DM 25 A Continuous Source Current(Diode Conduction) I S 2.3 A TA=25℃ 2.5 Power Dissipation TA=70℃ PD 1.6 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ T ≤ 10sec 50 Thermal Resistance-Junction to Ambient Steady State RθJA 80 ℃/W
2009/07/20 Ver.1 Page 3 SPN4906 N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 40 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 0.5 1.0 V Gate Leakage Current I GSS V DS=0V ,VGS=±12V ±100 nA VDS=40V ,VGS=0V 1 Zero Gate V oltage Drain Current I DSS VDS=40V ,VGS=0V TJ=85℃ 5 uA On-State Drain Current I D(on) V DS= 5V ,VGS =4.5V 10 A VGS= 10V ,ID=6.0A 0.040 0.045 VGS=4.5V ,ID=5.0A 0.047 0.054Drain-Source On-Resistance R DS(on) VGS=2.5V ,ID=4.5A 0.075 0.083 Ω Forward Transconductance gfs V DS=15V ,ID=6.2A 13 S Diode Forward V oltage V SD I S=2.3A,VGS =0V 0.8 1.2 V Dynamic Total Gate Charge Q g 16 24 Gate-Source Charge Q gs 3 Gate-Drain Charge Q gd VDS=15V ,VGS=10V ID= 2A 2.5 nC td(on) 15 20 Turn-On Time tr 6 12 td(off) 10 20 Turn-Off Time tf VDD=15V ,RL=15Ω ID≡1.0A,VGEN=10V RG=6Ω 40 80 nS
2009/07/20 Ver.1 Page 4 SPN4906 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2009/07/20 Ver.1 Page 5 SPN4906 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2009/07/20 Ver.1 Page 6 SPN4906 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2009/07/20 Ver.1 Page 7 SPN4906 N-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE
2009/07/20 Ver.1 Page 8 SPN4906 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com