SPN4850_11 SYNC-POWER | Alldatasheet
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Technical content
2011/10 /04 Ver.2 Page 1 SPN4850 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN4850 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . z DC/DC Converter z Load Switch
FEATURES
PIN CONFIGURATION(SOP – 8P) PART MARKING 60V/7.2A,RDS(ON)= 27mΩ@VGS= 10V 60V/6.8A,RDS(ON)= 32mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design
2011/10 /04 Ver.2 Page 2 SPN4850 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPN4850S8RG SOP- 8P SPN4850 SPN4850S8RGB SOP- 8P SPN4850 ※ SPN4850S8RG : 13” Tape Reel ; Pb – Free ※ SPN4850S8RGB : 13” Tape Reel ; Pb – Free ; Halogen -Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 60 V Gate –Source V oltage V GSS ±20 V TA=25℃ 7.2 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID 6.8 A Pulsed Drain Current I DM 40 A Avalanche Current I AS 15 A TA=25℃ 2.5 Power Dissipation TA=70℃ PD 1.6 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 80 ℃/W
2011/10 /04 Ver.2 Page 3 SPN4850 N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 60 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 3.0 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=48V ,VGS=0V 1 Zero Gate V oltage Drain Current I DSS VDS=48V ,VGS=0V TJ=55℃ 5 uA On-State Drain Current I D(on) V DS≥5V ,VGS =10V 25 A VGS= 10V ,ID=7.2A 0.023 0.027Drain-Source On-Resistance R DS(on) VGS=4.5V ,ID=6.8A 0.027 0.032 Ω Forward Transconductance gfs V DS=15V ,ID=6.2A 25 S Diode Forward V oltage V SD I S=1.7A,VGS =0V 0.8 1.2 V Dynamic Total Gate Charge Q g 25 30 Gate-Source Charge Q gs 4.2 Gate-Drain Charge Q gd VDS=30V ,VGS=10V ID= 6A 5.3 nC Input Capacitance C iss 950 1400 Output Capacitance C oss 180 Reverse Transfer Capacitance C rss VDS=30VGS=0V f=1MHz 115 pF td(on) 10 20 Turn-On Time tr 10 20 td(off) 25 50 Turn-Off Time tf VDD=30V ,RL=30Ω ID≡1.0A,VGEN=10V RG=6Ω 12 25 nS
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2011/10 /04 Ver.2 Page 7 SPN4850 N-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE
2011/10 /04 Ver.2 Page 8 SPN4850 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com
2011/10 /04 Ver.2 Page 9 SPN4850 N-Channel Enhancement Mode MOSFET