SPN340T06T220TGB SYNC-POWER | Alldatasheet
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Technical content
N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN 340T06 is the N -Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.. DC/DC Converter Hard Switching and High Speed Circuit Synchronous Buck Converter Power Tools UPS Motor Control FEATURES PIN CONFIGURATION 60V/340A, RDS(ON)=1.9mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability Enhanced Avalanche Ruggedness TO-220-3L package design TO-220-3L PART MARKING
N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 D Drain
3 S Source
ORDERING INFORMATION
Part Number Package Part Marking SPN340T06T220TGB TO-220-3L SPN340T06 ※ SPN340T060T220TGB: Tube ; Pb – Free; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS 60 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current(Silicon Limited) TC=25℃ ID 340 A TC=70℃ 240 Continuous Drain Current(Package Limited) TC=25℃ 120 Pulsed Drain Current IDM 900 A Power Dissipation TA=25℃ PD 104 W Avalanche Energy with Single Pulse ( Tc=25℃, L =1mH) EAS 702 mJ Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Case RθJC 1.2 ℃/W
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=250uA 60 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=250uA 2 3 4 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=60V,VGS=0V TJ = 25 °C 1 uA VDS=60,VGS=0V TJ =100 °C 100 On-State Drain Current ID(on) VDS≥5V ,VGS =10V 60 A Drain-Source On-Resistance RDS(on) VGS=10V ,ID=20A 1.67 1.9 mΩ Forward Transconductance gfs VDS=5V ,ID=20A 92 S Gate Resistance RG VGS=0V ,VDS=Open, f=1MHz 0.7 Ω Diode Forward V oltage VSD IF=20A,VGS=0V 0.9 1.2 V Dynamic Total Gate Charge Qg VDS=30V ,VGS=10V ID=20A 124 nC Gate-Source Charge Qgs 30 Gate-Drain Charge Qgd 20 Input Capacitance Ciss VDS=30V ,VGS=0V f=1MHz 10570 pF Output Capacitance Coss 4050 Reverse Transfer Capacitance Crss 84 Turn-On Time td(on) VDD=30V, ID=20A, VGS=10V, RG=3Ω nS tr 27 Turn-Off Time td(off) 70 tf 15
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact a nd consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from i ts use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1 Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com