SPN3406_08 SYNC-POWER | Alldatasheet

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2008/06/20 Ver.2 Page 1 SPN3406 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN3406 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES PIN CONFIGURATION(SOT-23-3L) PART MARKING ‹ 30V/5.4A,RDS(ON)= 40mΩ@VGS=10V ‹ 30V/4.6A,RDS(ON)= 50mΩ@VGS=4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOT-23-3L package design

2008/06/20 Ver.2 Page 2 SPN3406 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN3406S23RG SOT-23-3L A6YW SPN3406S23RGB SOT-23-3L A6YW ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN3406S23RG : Tape Reel ; Pb – Free ※ SPN3406S23RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS A=25 Unless otherwise℃ noted) Parameter Symbol Typical Unit Drain-Source V oltage V DSS 30 V Gate –Source V oltage V GSS ±20 V TA=25℃ 4.0 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID 3.2 A Pulsed Drain Current I DM 25 A Continuous Source Current(Diode Conduction) I S 1.7 A TA=25℃ 2.0 Power Dissipation TA=70℃ PD 1.3 W Operating Junction Temperature T J 150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 90 /W ℃

2008/06/20 Ver.2 Page 3 SPN3406 N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 30 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 3.0 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=24V ,VGS=1.0V 1 Zero Gate V oltage Drain Current I DSS VDS=24V ,VGS=0.0V TJ=55℃ 10 uA On-State Drain Current I D(on) VDS≧4.5V ,VGS=4.5V 10 A VGS = 10V ,ID=4.0A 0.028 0.040Drain-Source On-Resistance R DS(on) VGS =4.5V ,ID=3.6A 0.035 0.050 Ω Forward Transconductance gfs V DS=4.5V ,ID=5.4A 12 S Diode Forward V oltage V SD I S=1.7A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Q g 10 18 Gate-Source Charge Q gs 1.6 Gate-Drain Charge Q gd VDS=15VGS=10V ID≡6.7A 3.2 nC Input Capacitance C iss 450 Output Capacitance C oss 240 Reverse Transfer Capacitance C rss VDS=15VGS=0V f=1MHz pF td(on) 7 15 Turn-On Time tr 10 20 td(off) 20 40 Turn-Off Time tf VDD=15RL=15 ID≡1.0A,VGEN=10 RG=6Ω 11 20 ns

2008/06/20 Ver.2 Page 4 SPN3406 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2008/06/20 Ver.2 Page 5 SPN3406 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2008/06/20 Ver.2 Page 6 SPN3406 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2008/06/20 Ver.2 Page 7 SPN3406 N-Channel Enhancement Mode MOSFET SOT-23-3L PACKAGE OUTLINE

2008/06/20 Ver.2 Page 8 SPN3406 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com