SPN3402W SYNC-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

2012/11/08 Ver.1 Page 1 SP N 3402 W N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN3402W is the N- Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES PIN CONFIGURATION ( SOT-23 ) 30V/2.8A,R DS(ON) = 58m Ω@V GS =10V 30V/2.3A,R DS(ON) = 65m Ω@V GS =4.5V 30V/1.5A,R DS(ON) = 105mΩ@V GS =2.5V Super high density cell design for extremely low R DS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PART MARKING

2012/11/08 Ver.1 Page 2 SP N 3402 W N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN3402WS23RG SOT-23 S42W SPN3402WS23RGB SOT-23 S42W Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN3402WS23RG : Tape Reel ; Pb – Free ※ SPN3402WS23RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS A =25 Unless otherwise℃ noted) Parameter Symbol Typical Unit Drain-Source V oltage V DSS 30 V Gate –Source V oltage V GSS ±12 V Continuous Drain Current(T J=150 )℃ TA =25℃ ID 4.0 A TA =70℃ 2.8 Pulsed Drain Current IDM 10 A Continuous Source Current(Diode Conduction) I S 1.25 A Power Dissipation TA =25℃ PD 1.25 W TA =70 ℃ 0.8 Operating Junction Temperature T J 150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 100 /W ℃

2012/11/08 Ver.1 Page 3 SP N 3402 W N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

A =25 Unles℃ s otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =250uA 30 V Gate Threshold V oltage V GS(th) V DS =V GS ,I D =250uA 0.8 1.6 Gate Leakage Current I GSS V DS =0V ,V GS =±12V ±100 nA Zero Gate V oltage Drain Current I DSS V DS =24V ,V GS =0.0V 1 uA V DS =24V ,V GS =0.0V TJ=55℃ 10 On-State Drain Current I D(on) V DS ≧4.5V ,V GS =10V 6 A V DS ≧4.5V ,V GS =4.5V 4 Drain-Source On-Resistance R DS(on) V GS = 10V ,I D =2.8A 0.048 0.058 Ω V GS =4.5V ,I D =2.3A 0.053 0.065 V GS =2.5V ,I D =1.5A 0.080 0.105 Forward Transconductance gfs V DS =4.5V ,I D =2.8A 4.6 S Diode Forward V oltage V SD I S=1.25A,V GS =0V 0.82 1.2 V Dynamic Total Gate Charge Q g V DS =15,VGS =4.5V ID ≡2.0A 4.2 6 nC Gate-Source Charge Q gs 0.6 Gate-Drain Charge Q gd 1.5 Input Capacitance C iss V DS =15,VGS =0V f =1MHz 350 pF Output Capacitance C oss 55 Reverse Transfer Capacitance C rss 41 Turn-On Time td(on) V DD =15,RL=10Ω V GEN =10V ,RG =3Ω 2.5 ns tr 2.5 Turn-Off Time td(off) 20 tf 4

2012/11/08 Ver.1 Page 4 SP N 3402 W N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2012/11/08 Ver.1 Page 5 SP N 3402 W N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2012/11/08 Ver.1 Page 6 SP N 3402 W N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2012/11/08 Ver.1 Page 7 SP N 3402 W N-Channel Enhancement Mode MOSFET SOT-23 PACKAGE OUTLINE

2012/11/08 Ver.1 Page 8 SP N 3402 W N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com