SPN30T10 SYNC-POWER | Alldatasheet

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2012/05/30 Ver.2 Page 1 SP N 30 T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN30T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. High Frequency Small Power System DC/DC Converter Load Switch FEATURES PIN CONFIGURATION TO-252 PART MARKING 100V/20A, RDS(ON) =50m Ω@V GS = 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 package design SPN30T10 AAAAAA BBBBBB

2012/05/30 Ver.2 Page 2 SP N 30 T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN30T10T252RGB TO-252 SPN30T10 ※ SPN30T10T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A =25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 100 V Gate –Source V oltage V GSS ±20 V TC =25℃ 22 Continuous Drain Current(T J=150 )℃ TC =70℃ ID A Pulsed Drain Current IDM 45 A Avalanche Current IAS 27 A Power Dissipation @ T A =25 ℃ PD 52 W Operating Junction Temperature T J 150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 62 /W ℃

2012/05/30 Ver.2 Page 3 SP N 30 T10 N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

A =25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =250uA 100 Gate Threshold V oltage V GS(th) V DS =V GS ,I D =250uA 1 2.5 V Gate Leakage Current I GSS V DS =0V ,V GS =±20V ±100 nA V DS =80V ,V GS =0V 10 Zero Gate V oltage Drain Current I DSS V DS =80V ,V GS =0V TJ=125℃ 100 uA On-State Drain Current I D(on) V DS ≥5V ,V GS =10V 22 A V GS = 10V ,I D =20A 45 m Ω Drain-Source On-Resistance R DS(on) V GS = 4.5V ,I D =15A 50 m Ω Forward Transconductance gfs V DS =5V ,I D =3A 68 S Diode Forward V oltage V SD I S=1A,V GS =0V 1.2 V Dynamic Total Gate Charge Q g 55 Gate-Source Charge Q gs 7.5 Gate-Drain Charge Q gd V DS =15V , VGS =4.5V ID = 15A nC Input Capacitance C iss 3850 Output Capacitance C oss 137 Reverse Transfer Capacitance C rss V DS =15V , VGS =0V f=1MHz pF td(on) 19 Turn-On Time tr 4 td(off) 84 Turn-Off Time tf V DD =50V , ID =1A, V GEN =10V R G =3.3 Ω nS

2012/05/30 Ver.2 Page 4 SP N 30 T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 On -Resistance vs. Gate Voltage Fig. 3 Forward Characteristics of Fig. 4 Gate Charge Characteristics Reverse Diodes Fig. Vgs vs. Junction Temperature Fig. 6 On- resistance vs. Junction Temperature

2012/05/30 Ver.2 Page 5 SP N 30 T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig . 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform Fig. 11 Unclam ped Inductive Waveform

2012/05/30 Ver.2 Page 6 SP N 30 T10 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE

2012/05/30 Ver.2 Page 7 SP N 30 T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com