SPN3009 SYNC-POWER | Alldatasheet

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2011/08/22 Ver.2 Page 1 SPN3009 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN3009 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3009 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. z High Frequency Synchronous Buck Converter z DC/DC Power System z Load Switch FEATURES PIN CONFIGURATION TO-252 PART MARKING ‹ 30V/30A, RDS(ON)= 7.5mΩ@VGS=10V ‹ 30V/15A,RDS(ON)= 11.0mΩ@VGS=4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TO-252 package design

2011/08/22 Ver.2 Page 2 SPN3009 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN3009T252RGB TO-252 SPN3009 ※ SPN3009T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A=25 Unless otherwise℃ noted) Parameter Symbol Typical Unit Drain-Source V oltage V DSS 30 V Gate –Source V oltage V GSS ±20 V TA=25℃ 51 Continuous Drain Current TA=100℃ ID A Pulsed Drain Current I DM 120 A Avalanche Current I AS 34 A Single Pulse Avalanche Energy EAS 130 mJ Power Dissipation T A=25℃ P D 2.42 W Operating Junction Temperature T J 150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient (t≦10s) RθJA 62 /W ℃

ELECTRICAL CHARACTERISTICS

2011/08/22 Ver.2 Page 3 SPN3009 N-Channel Enhancement Mode MOSFET (TA=25 Unless otherwise ℃ noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 30 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 2.5 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=24V ,VGS=0V 1 Zero Gate V oltage Drain Current I DSS VDS=24V ,VGS=0V , TJ=55℃ 5 uA On-State Drain Current I D(on) V DS≥5V ,VGS =10V 51 A VGS= 10V ,ID=30A 7.5 9 Drain-Source On-Resistance R DS(on) VGS=4.5V ,ID=15A 11 13.5 mΩ Forward Transconductance gfs V DS=5V ,ID=30A 42 S Diode Forward V oltage V SD I S=1A,VGS =0V 1 V Single Pulse Avalanche Energy EAS VDD=25V , L=0.1mH, IAS=20A 45 mJ Dynamic Total Gate Charge Q g 10.6 Gate-Source Charge Q gs 4.2 Gate-Drain Charge Q gd VDS=15V ,VGS=4.5V ID= 15A nC Input Capacitance C iss 1127 Output Capacitance C oss 194 Reverse Transfer Capacitance C rss VDS=15VGS=0V f=1MHz pF td(on) 6.4 13 Turn-On Time tr 70 127 td(off) 22.5 45 Turn-Off Time tf VDD=15V , ID=15A,VGEN=10V RG=3.3Ω 8 18 nS TYPICAL CHARACTERISTICS

2011/08/22 Ver.2 Page 4 SPN3009 N-Channel Enhancement Mode MOSFET Fig. 1 Typical Output Characteristics Fig. 2 Transfer Characteristics Fig. 3 On-Resistance vs Gate voltage Fig. 4 Gate Charge Characteristics Fig. 5 On-Resistance vs Junction Temp Fig. 6 Vgs vs Junction Temperature

2011/08/22 Ver.2 Page 5 SPN3009 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristic s Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform Fig. 11 Unclamped Inductive Waveform

2011/08/22 Ver.2 Page 6 SPN3009 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE

2011/08/22 Ver.2 Page 7 SPN3009 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com