SPN3006 SYNC-POWER | Alldatasheet
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2011/08/22 Ver.2 Page 1 SPN3006 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN3006 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. z High Frequency Synchronous Buck Converter z DC/DC Power System z Load Switch FEATURES PIN CONFIGURATION TO-252 PART MARKING 30V/30A,RDS(ON)= 4.7mΩ@VGS=10V 30V/15A,RDS(ON)= 7.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 package design
2011/08/22 Ver.2 Page 2 SPN3006 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 S Source
3 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPN3006T252RGB TO-252 SPN3006 ※ SPN3006T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A=25 Unless otherwise℃ noted) Parameter Symbol Typical Unit Drain-Source V oltage V DSS 30 V Gate –Source V oltage V GSS ±20 V TA=25℃ 80 Continuous Drain Current TA=100℃ ID A Pulsed Drain Current I DM 160 A Avalanche Current I AS 48 A Single Pulse Avalanche Energy EAS 259 mJ Power Dissipation T A=25℃ P D 6 W Operating Junction Temperature T J 150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient (t≦10s) RθJA 25 /W ℃
2011/08/22 Ver.2 Page 3 SPN3006 N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25 Unless otherwise not℃ ed) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 30 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 2.5 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=24V ,VGS=0V 1 Zero Gate V oltage Drain Current I DSS VDS=24V ,VGS=0V , TJ=55℃ 5 uA On-State Drain Current I D(on) V DS≥5V ,VGS =10V 80 A VGS= 10V ,ID=30A 4.7 5.5 Drain-Source On-Resistance R DS(on) VGS=4.5V ,ID=15A 7.5 9 mΩ Forward Transconductance gfs V DS=5V ,ID=30A 22 S Diode Forward V oltage V SD I S=1A,VGS =0V 1 V Single Pulse Avalanche Energy EAS VDD=25V , L=0.1mH, IAS=24A 60 mJ Dynamic Total Gate Charge Q g 20 18 Gate-Source Charge Q gs 7.6 Gate-Drain Charge Q gd VDS=15V ,VGS=4.5V ID= 15A 7.2 nC Input Capacitance C iss 2300 Output Capacitance C oss 265 Reverse Transfer Capacitance C rss VDS=15VGS=0V f=1MHz 210 pF td(on) 7.8 15 Turn-On Time tr 15 12 td(off) 37 30 Turn-Off Time tf VDD=15V , ID=15A,VGEN=10V RG=3.3Ω 10.6 15 nS
2011/08/22 Ver.2 Page 4 SPN3006 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 Transfer Characteristics Fig. 3 On-Resistance vs Gate voltage Fig. 4 Gate Charge Characteristics Fig. 5 On-Resistance vs Junction Temp Fig. 6 Vgs vs Junction Temperature
2011/08/22 Ver.2 Page 5 SPN3006 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristic s Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform Fig. 11 Unclamped Inductive Waveform
2011/08/22 Ver.2 Page 6 SPN3006 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE
2011/08/22 Ver.2 Page 7 SPN3006 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com