SPN2N7002K SYNC-POWER | Alldatasheet

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N-Channel Enhancement Mode MOSFET 2015/03/18 Ver.1 Page 1 DESCRIPTION APPLICATIONS The SPN2N7002K is the N-Channel enhancement mode field e ffect transistors a re pro duced u sing h igh cell dens ity DMOS technology. These products have been des igned to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640 mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  High saturation current capability. Direct Logic-Level Interface: TTL/CMOS  Battery Operated Systems  Solid-State Relays FEATURES PIN CONFIGURATION(SOT-23)  60V/0.50A , RDS(ON)= 2.0Ω@VGS=10V  60V/0.20A , RDS(ON)= 4.0Ω@VGS= 4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PART MARKING

N-Channel Enhancement Mode MOSFET 2015/03/18 Ver.1 Page 2 PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN2N7002KS23RGB SOT-23 NKXX ※ SPN2N7002KS23RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS V Gate –Source Voltage - Continuous VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ ID 0.3 A Pulsed Drain Current () IDM 0.8 A Power Dissipation TA=25℃ PD 0.35 W Operating Junction Temperature TJ -55 ~ 150 ℃ Storage Temperature Range TSTG -55 ~ 150 ℃ Thermal Resistance-Junction to Ambient RθJA 350 ℃/W () Pulse width limited by safe operating area

N-Channel Enhancement Mode MOSFET 2015/03/18 Ver.1 Page 3 ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 1.7 2.5 Gate Leakage Current IGSS VDS=0V,VGS=±20V ±30 uA Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V TJ=25℃ uA VDS=48V,VGS=0V TJ=70℃ 100 Drain-Source On-Resistance RDS(on) VGS=10V,ID=0.50A 2.0 3.0 Ω VGS= 4.5V,ID=0.20A 3.0 3.5 Forward Transconductance Gfs(1) VDS = 10 V, ID = 0.6 A 0.08 S Diode Forward Voltage VSD(1) VGS = 0 V, IS = 0.5A 1.3 V Dynamic Total Gate Charge Qg VDD = 50 V, ID = 0.6 A, VGS = 4.5 V 0.6 0.8 nC Gate-Source Charge Qgs 0.2 Gate-Drain Charge Qgd 0.2 Input Capacitance Ciss VDS = 25 V, f = 1 MHz, VGS = 0 30 50 pF Output Capacitance Coss 7 Reverse Transfer Capacitance Crss 4 Turn-On Time td(on) VDD = 30 V, ID = 0.6 A RG = 3.3Ω VGS = 10.0 V RD = 52Ω ns tr 15 Turn-Off Time td(off) 8 tf 11 (1) Pulsed: Pulse duration ≦ 300 µs, duty cycle≦ 2 %. (2) Pulse width limited by safe operating area.

N-Channel Enhancement Mode MOSFET 2015/03/18 Ver.1 Page 4 TYPICAL CHARACTERISTICS

N-Channel Enhancement Mode MOSFET 2015/03/18 Ver.1 Page 5 TYPICAL CHARACTERISTICS

N-Channel Enhancement Mode MOSFET 2015/03/18 Ver.1 Page 6 TYPICAL CHARACTERISTICS

N-Channel Enhancement Mode MOSFET 2015/03/18 Ver.1 Page 7 SOT-23 PACKAGE OUTLINE Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.820 1.200 0.0323 0.0430 A1 0.000 0.100 0.0000 0.0040 A2 0.820 1.100 0.0323 0.0390 b 0.300 0.500 0.0120 0.0200 c 0.080 0.150 0.0030 0.0060 D 2.800 3.000 0.1100 0.1180 E 1.200 1.400 0.0470 0.0550 E1 2.200 2.550 0.0866 0.1000 e 0.95 TYP 0.037 TYP e1 1.800 2.000 0.0710 0.0790 L 0.529 REF 0.0208 REF L1 0.200 0.500 0.0079 0.0200 θ 0? 8? 0? 8?

N-Channel Enhancement Mode MOSFET 2015/03/18 Ver.1 Page 8 Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com