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N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN230T06 is the N -Channel enhancement mod e power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on -state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control FEATURES PIN CONFIGURATION 60V/230A, RDS(ON)=2.5mΩ@VGS=10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220 and TO-263-2L package design TO-220 TO-263-2L PART MARKING
N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 D Drain
3 S Source
ORDERING INFORMATION
Part Number Package Part Marking SPN230T06T220TGB TO-220-3L SPN230T06 SPN230T06T262RGB TO-263-2L SPN230T06 ※ SPN230T06T220TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN230T06T262RGB : Tape&Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS 60 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ ID 230 A TA=100℃ 160 Pulsed Drain Current IDM 400 A Avalanche Energy, Single Pulse @ L=0.1mH, TA=25℃ EAS 180 mJ Power Dissipation @ TA=25℃ PD 330 W Operating Junction Temperature TJ -55/175 ℃ Storage Temperature Range TSTG -55/175 ℃ Thermal Resistance-Junction to Case RθJc 0.5 ℃/W Thermal Resistance-Junction to Ambient RθJA 60 ℃/W
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=250uA 60 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=250uA 2.0 2.8 4.0 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=60V ,VGS=0V TJ=25℃ 1 uA VDS=60V ,VGS=0V TJ=100℃ 100 Drain-Source On-Resistance RDS(on) VGS= 10V ,ID=20A 1.9 2.5 mΩ Forward Transconductance gfs VDS=5V ,ID=20A 80 S Diode Forward V oltage VSD IS=20A,VGS =0V 0.9 1.2 V Dynamic Total Gate Charge Qg VDS=30V, VGS=10V ID= 20A nC Gate-Source Charge Qgs 24 Gate-Drain Charge Qgd 14 Input Capacitance Ciss VDS=30V, VGS=0V f=1MHz 7070 pF Output Capacitance Coss 2140 Reverse Transfer Capacitance Crss 63 Turn-On Time td(on) VDD=30V, VGS=10V ID=20A, RG=10Ω nS tr 62 Turn-Off Time td(off) 95 tf 34
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 3 On Resistances vs Drain Current Fig. 4 Capacitance Fig. 5 Gate Charge Fig. 6 On - Resistance vs Junction Temperature TYPICAL CHARACTERISTICS Fig. 7 Source Drain Diode Forward Voltage Fig. 8 On Resistance vs Gate Source Voltage Fig. 9 Normalized Thermal Transient Impedance, Junction to Foot
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS TO-220 PACKAGE OUTLINE
N-Channel Enhancement Mode MOSFET TO-220 PACKAGE OUTLINE
N-Channel Enhancement Mode MOSFET TO-263-2L PACKAGE OUTLINE
N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from i ts use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2016 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com