SPN2038 SYNC-POWER | Alldatasheet

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2012/09/17 Ver.2 Page 1 SP N2038 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN2038 is the N- Channel logic enhancement mode power field effect transistor which is produced with high cell density DMOS trench technology. The SPN2038 has been designed specifically to improve the overall efficiency of DC /DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Power Management in Note book Powered System DC/DC Converter Load Switch FEATURES PIN CONFIGURATION TO-252 PART MARKING 20V/14A, RDS(ON) = 16mΩ@V GS =4.5V 20V/7A,R DS(ON) = 22mΩ@V GS =2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability

2012/09/17 Ver.2 Page 2 SP N2038 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN2038T252RGB TO-252 SPN2038 ※ SPN2038T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A =25 Unless otherwise℃ noted) Parameter Symbol Typical Unit Drain-Source V oltage V DSS 20 V Gate –Source V oltage V GSS ±16 V TC =25℃ 28 Continuous Drain Current TC =100 ℃ ID A Pulsed Drain Current IDM 70 A Power Dissipation T C =25℃ P D 25 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Case R θJC 5 /W ℃

2012/09/17 Ver.2 Page 3 SP N2038 N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

A =25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =250uA 20 Gate Threshold V oltage V GS(th) V DS =V GS ,I D =250uA 0.5 1.2 V Gate Leakage Current I GSS V DS =0V ,V GS =±16V ±100 nA V DS =16V ,V GS =0V 1 Zero Gate V oltage Drain Current I DSS V DS =16V ,V GS =0V TJ=55℃ 5 uA On-State Drain Current I D(on) V DS ≥5V ,V GS =4.5V 28 A Forward Transconductance gfs V DS =5V ,I D =14A 30 S Diode Forward V oltage V SD I S=1A,V GS =0V 1.2 V Dynamic Total Gate Charge Q g 9.8 Gate-Source Charge Q gs 2.1 Gate-Drain Charge Q gd V DS =15V , VGS =4.5V ID = 14A nC Input Capacitance C iss 772 Output Capacitance C oss 83 Reverse Transfer Capacitance C rss V DS =15, VGS =0V f=1MHz pF td(on) 4 Turn-On Time tr 12.5 td(off) 20 Turn-Off Time tf V DD =10V , ID ≡14A, V GS =4.5V , RG =3.3 Ω nS

2012/09/17 Ver.2 Page 4 SP N2038 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 On-Resistance vs Gate Voltage Fig. 3 Forward Characteristics Fig. 4 Total Ga te Charge Fig. 5 Vgs vs Temperature Fig. 6 Rdson vs Temperature

2012/09/17 Ver.2 Page 5 SP N2038 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Capacitance vs Vds Fig. 8 Safe Operat ion Region Fig. 9 Maximum Transient Thermal Impedance Fig. 10 Switching Time Waveform Fig. 11 Gat e Charge Waveform

2012/09/17 Ver.2 Page 6 SP N2038 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE

2012/09/17 Ver.2 Page 7 SP N2038 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2012 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com