SPN166T06T220TGB SYNC-POWER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN166T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state res istance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool FEATURES PIN CONFIGURATION 60V/166A,RDS(ON)=3.0mΩ@VGS=10V RDS(ON)=4.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220-3L/TO-220F-3L/PPAK5x6-8L package design TO-220 TO-220F PPAK 5x6 PART MARKING
N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 D Drain
3 S Source
1 S Source
2 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPN166T06T220TGB TO-220-3L SPN166T06 SPN166T06T220FTGB TO-220F-3L SPN166T06 SPN166T06DN8RGB PPAK5x6-8L SPN166T06 ※ SPN166T06T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN166T06T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN166T06DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free
N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS 60 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current (Silicon Limited)(TO-220/TO-220F) Tc=25℃ ID 166 A Tc=70℃ 118 Continuous Drain Current (Silicon Limited)(PPAK5x6) Tc=25℃ ID 161 A Tc=70℃ 102 Pulsed Drain Current IDM 400 A Power Dissipation @ Tc=25℃ TO-220 PD 104 W Power Dissipation @ Tc=25℃ TO-220F 93 Power Dissipation @ Tc=25℃ PPAK5x6 83 Avalanche Energy with Single Pulse ( TC=25℃, L=0.1mH. ) EAS 73 mJ Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Case (TO-220/TO-220F) RθJC 1.2 ℃/W Thermal Resistance-Junction to Case (PPAK5x6) RθJC 1.5 ℃/W Note : The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 80A for PPAK5x6-8L
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=250uA 60 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=250uA 1.0 1.6 2.4 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=48V, VGS=0V TJ =25 °C 1 uA VDS=48V, VGS=0V TJ =100 °C 100 Drain-Source On-Resistance (TO-220/TO-220F) RDS(on) VGS=10V ,ID=20A 2.5 3.0 mΩ VGS=4.5V ,ID=20A 3.5 4.5 Drain-Source On-Resistance (PPAK5x6) RDS(on) VGS=10V ,ID=20A 2.0 2.4 mΩ VGS=4.5V ,ID=20A 2.7 3.5 Forward Transconductance gfs VDS=5V ,ID=20A 80 S Diode Forward V oltage VSD IS=20A ,VGS=0V 0.9 1.2 V Gate Resistance RG VGS=0V,VDS Open, f=1MHz 1.6 Ω Dynamic Total Gate Charge (10V) Qg VDS=30V,VGS=10V ID=20A nC Total Gate Charge (4.5V) Qg 31 Gate-Source Charge Qgs 18 Gate-Drain Charge Qgd 12 Input Capacitance Ciss VDS=30V ,VGS=0V f=1MHz 4424 pF Output Capacitance Coss 1670 Reverse Transfer Capacitance Crss 73 Turn-On Time td(on) VDD=30V, ID=20A VGEN=10V,RG=10Ω nS tr 11 Turn-Off Time td(off) 58 tf 17
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
N-Channel Enhancement Mode MOSFET Information provided is a lleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No li cense is granted by alleg ation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied . SYNC Power Corporati on products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com