SPN166T04 SYNC-POWER | Alldatasheet
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2016/9/08 Ver.2 Page 1 SPN166T04 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN166T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state res istance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool FEATURES PIN CONFIGURATION 45V/20A, RDS(ON)=2.9mΩ@VGS=10V RDS(ON)=4.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L/TO-251/TO-252/PPAK5x6 package design TO-220 TO-251 TO-252 PPAK 5x6 PART MARKING
2016/9/08 Ver.2 Page 2 SPN166T04 N-Channel Enhancement Mode MOSFET T0-220 PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 D Drain
3 S Source
TO-251/TO-252 PIN DESCRIPTION Pin Symbol Description
2 S Source
3 D Drain
1 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPN166T04T220TGB TO-220-3L SPN166T04 SPN166T04ST251TGB TO-251 SPN166T04 SPN166T04ST252RGB TO-252 SPN166T04 SPN166T04DN8RGB PPAK5x6 SPN166T04 ※ SPN166T04T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN166T04ST251TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN166T04T252RGB : Tape& Reel ; Pb – Free ; Halogen – Free ※ SPN166T04DN82RGB : Tape&Reel ; Pb – Free ; Halogen - Free
2016/9/08 Ver.2 Page 3 SPN166T04 N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS 45 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current(TJ=150℃) (TO-220/TO-251) Tc=25℃ ID 166 A Tc=70℃ 118 Continuous Drain Current(TJ=150℃) (PPAK5x6) Tc=25℃ ID 125 A Tc=100℃ 88 Pulsed Drain Current (TO-220/TO-251) IDM 450 A Pulsed Drain Current (PPAK5x6) IDM 410 A Power Dissipation @ Tc=25℃ TO-220 PD 166 W Power Dissipation @ Tc=25℃ TO251/TO-252 83 Power Dissipation @ Tc=25℃ PPAK5x6 72 Avalanche Energy with Single Pulse ( TC=25℃, L = 0.1mH. ) (TO-220/TO-251) EAS 180 mJ Avalanche Energy with Single Pulse ( TC=25℃, L = 0.1mH. ) (PPAK5x6) 211 Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Case (TO-220) RθJC 1.2 ℃/W Thermal Resistance-Junction to Case (TO-251/TO-252) RθJC 1.35 ℃/W Thermal Resistance-Junction to Case (PPAK5x6) RθJC 1.5 ℃/W
2016/9/08 Ver.2 Page 4 SPN166T04 N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=250uA 45 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=250uA 1.0 2.5 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=45V, VGS=0V TJ = 25 °C 1 uA VDS=45V, VGS=0V TJ = 100 °C 100 Drain-Source On-Resistance RDS(on) VGS=10V ,ID=20A 2.5 2.9 mΩ VGS=4.5V ,ID=20A 3.7 4.5 Forward Transconductance gfs VDS=5V ,ID=20A 65 S Diode Forward V oltage VSD IS=20A ,VGS =0V 0.9 1.2 V Dynamic Total Gate Charge (10V) Qg VDS=20V, VGS=10V ID = 20A nC Total Gate Charge (4.5V) Qg 25 Gate-Source Charge Qgs 8 Gate-Drain Charge Qgd 10 Input Capacitance Ciss VDS=20V , VGS=0V f=1MHz 3322 pF Output Capacitance Coss 1367 Reverse Transfer Capacitance Crss 96 Turn-On Time td(on) VDD=20V, ID=20A VGEN=10V, RG=10Ω nS tr 12 Turn-Off Time td(off) 57 tf 18
2016/9/08 Ver.2 Page 5 SPN166T04 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2016/9/08 Ver.2 Page 6 SPN166T04 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2016/9/08 Ver.2 Page 7 SPN166T04 N-Channel Enhancement Mode MOSFET TO-220 PACKAGE OUTLINE
2016/9/08 Ver.2 Page 8 SPN166T04 N-Channel Enhancement Mode MOSFET PPAK5X6 PACKAGE OUTLINE
2016/9/08 Ver.2 Page 9 SPN166T04 N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE
2016/9/08 Ver.2 Page 10 SPN166T04 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE
2016/9/08 Ver.2 Page 11 SPN166T04 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No l icense is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplie d. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2016 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com