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2013/01/09 Ver.1 Page 1 SPN12T20 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN12T20 is the N-Channe l logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN12T20 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. High Frequency Small Power Switching for MB/NB/VGA Network DC/DC Power System Load Switch FEATURES PIN CONFIGURATION 200V/12A,RDS(ON)=210mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 package design TO-252 PART MARKING
2013/01/09 Ver.1 Page 2 SPN12T20 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 S Source
3 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPN12T20T252RGB TO-252 SPN12T20 ※ SPN12T20T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 200 V Gate –Source V oltage V GSS ±20 V Continuous Drain Current(TJ=150 )℃ TA=25℃ ID 18 A TA=70℃ 12 Pulsed Drain Current I DM 32 A Power Dissipation T A=25℃ P D 40 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 100 /W ℃
2013/01/09 Ver.1 Page 3 SPN12T20 N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 200 V Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 2.0 3.8 5.0 Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current I DSS V DS=160V ,VGS=0V 2 uA On-State Drain Current I D(on) V DS≥5V ,VGS =10V 18 A Drain-Source On-Resistance R DS(on) VGS= 10V ,ID=12A 0.18 0.21 Ω Forward Transconductance gfs V DS=5V ,ID=12A 8.5 S Diode Forward V oltage V SD I S=1A,VGS =0V 1 V Dynamic Total Gate Charge Q g VDS=160V ,VGS=10V ID= 12A 17.6 25 nCGate-Source Charge Q gs 7.6 11 Gate-Drain Charge Q gd 3.7 5.2 Input Capacitance C iss VDS=25V ,VGS=0V f=1MHz 1000 1400 pFOutput Capacitance C oss 110 155 Reverse Transfer Capacitance C rss 2.4 3.5 Turn-On Time td(on) VDD=100V , ID=12A, VGEN=10V , RG=3.3Ω 9.4 19 nS tr 23 41 Turn-Off Time td(off) 18.4 37 tf 15.6 21.8
2013/01/09 Ver.1 Page 4 SPN12T20 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE
2013/01/09 Ver.1 Page 5 SPN12T20 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com