SPN125T04 SYNC-POWER | Alldatasheet

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Technical content

N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN125T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on -state res istance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES PIN CONFIGURATION  45V/125A, RDS(ON)= 4.5mΩ@VGS= 10V  45V/125A, RDS(ON)= 7.0mΩ@VGS= 4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-251/PPAK5x6 package design TO-220 TO-251 PPAK 5x6 PART MARKING

N-Channel Enhancement Mode MOSFET T0-220 PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 D Drain

3 S Source

2 S Source

3 D Drain

1 S Source

4 G Gate

5 D Drain

6 D Drain

7 D Drain

8 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN125T04T220TGB TO-220-3L SPN125T04 SPN125T04ST251TGB TO-251 SPN125T04 SPN125T04DN8RGB PPAK5x6 SPN125T04 ※ SPN125T04T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN125T04ST251TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN125T04DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free

N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS 45 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current(TJ=150℃) (TO-220/TO-251) TC=25℃ ID 125 A TC=100℃ 88 Continuous Drain Current(TJ=150℃) (PPAK5X6) TC=25℃ ID 101 A TC=100℃ 64 Pulsed Drain Current (TO-220/TO-251) IDM 350 A Pulsed Drain Current (PPAK5X6) IDM 220 A Power Dissipation @ TC=25℃ TO-220 PD 125 W Power Dissipation @ TC=25℃ TO251 83 Power Dissipation @ TC=25℃ PPAK5X6 72 Avalanche Energy with Single Pulse ( TC=25℃, L = 0.3mH. ) EAS 60 mJ Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Case (TO-220) RθJC 1.2 ℃/W Thermal Resistance-Junction to Case (TO-251) RθJC 1.35 ℃/W Thermal Resistance-Junction to Case (PPAK5X6) RθJC 1.5 ℃/W

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=250uA 45 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=250uA 1 1.8 2.2 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=45V, VGS=0V TJ = 25 °C 1 uA VDS=45V, VGS=0V TJ = 100 °C 100 Drain-Source On-Resistance RDS(on) VGS= 10V ,ID=20A 3.5 4.5 mΩ VGS= 4.5V ,ID=20A 4.6 7.0 Forward Transconductance gfs VDS=5V ,ID=20A 40 S Diode Forward V oltage VSD IF=20A ,VGS =0V 0.9 1.2 V Dynamic Total Gate Charge (10V) Qg VDS=20V, VGS=10V ID = 20A nC Total Gate Charge (4.5V) Qg 22 Gate-Source Charge Qgs 4 Gate-Drain Charge Qgd 10 Input Capacitance Ciss VDS=20V , VGS=0V f=1MHz 2159 pF Output Capacitance Coss 756 Reverse Transfer Capacitance Crss 118 Turn-On Time td(on) VDD=20V, ID=20A VGEN=10V, RG=10Ω nS tr 10 Turn-Off Time td(off) 41 tf 16

N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

N-Channel Enhancement Mode MOSFET TO-220 PACKAGE OUTLINE

N-Channel Enhancement Mode MOSFET PPAK5X6 PACKAGE OUTLINE

N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE

N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporati on presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No l icense is granted by allegation or otherwise under any patent or patent rights o f SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplie d. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2016 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com