SPN11T10 SYNC-POWER | Alldatasheet
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2010/08/03 Ver.1 Page 1 SPN11T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN11T10 is the N-Channe l logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN11T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. z Powered System z DC/DC Converter z Load Switch FEATURES PIN CONFIGURATION TO-252 TO-251 PART MARKING 100V/8A, RDS(ON)= 120mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design
2010/08/03 Ver.1 Page 2 SPN11T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 S Source
3 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPN11T10T252RGB TO-252 SPN11T10 SPN11T10T251TGB TO-251 SPN11T10 ※ SPN11T10T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ※ SPN11T10T251RGB : Tube ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 100 V Gate –Source V oltage V GSS ±20 V TA=25℃ 16 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID 10.0 A Pulsed Drain Current I DM 50 A Avalanche Current I AS 14 A Power Dissipation @ TA=25℃ PD 40 W Operating Junction Temperature T J 150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 110 /W ℃
2010/08/03 Ver.1 Page 3 SPN11T10 N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 100 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1 3 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=80V ,VGS=0V 25 Zero Gate V oltage Drain Current I DSS VDS=80V ,VGS=0V TJ=125℃ 250 uA On-State Drain Current I D(on) V DS≥5V ,VGS =10V 11 A VGS= 10V ,ID=8A 120 m Ω Drain-Source On-Resistance R DS(on) VGS= 4.5V ,ID=3A 200 m Ω Forward Transconductance gfs V DS=10V ,ID=8A 7.3 S Diode Forward V oltage V SD I S=8A,VGS =0V 1.3 V Dynamic Total Gate Charge Q g 13 21 Gate-Source Charge Q gs 2.2 Gate-Drain Charge Q gd VDS=80V ,VGS=10V ID= 10A nC Input Capacitance C iss 450 720 Output Capacitance C oss 65 Reverse Transfer Capacitance C rss VDS=25,VGS=0V f=1MHz pF td(on) 5 Turn-On Time tr 17 td(off) 15 Turn-Off Time tf VDD=50V ,RL=5Ω ID≡10A,VGEN=10V RG=3.3Ω 4.4 nS
2010/08/03 Ver.1 Page 4 SPN11T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2010/08/03 Ver.1 Page 5 SPN11T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2010/08/03 Ver.1 Page 6 SPN11T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2010/08/03 Ver.1 Page 7 SPN11T10 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE
2010/08/03 Ver.1 Page 8 SPN11T10 N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE
2010/08/03 Ver.1 Page 9 SPN11T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com