SPN10T10 SYNC-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

2012/07/23 Preliminary Page 1 SP N 10 T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN10T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN10T10 has been designed specifically to improve the overall efficie ncy of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Powered System DC/DC Converter Load Switch FEATURES PIN CONFIGURATION TO-220 TO-220F PART MARKING 100V/5A,R DS(ON) = 160mΩ@V GS = 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220,TO-220F package design

2012/07/23 Preliminary Page 2 SP N 10 T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 D Drain

3 S Source

ORDERING INFORMATION

Part Number Package Part Marking SPN10T10T220TGB TO-220 SPN10T10 SPN10T10T220FTGB TO-220F SPN10T10 ※ SPN10T10T220TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN10T10T220FTGB : Tube ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A =25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 100 V Gate –Source V oltage V GSS ±20 V TC =25℃ 9 Continuous Drain Current(T J=150 )℃ TC =100℃ ID 5.6 A Pulsed Drain Current IDM 30 A Avalanche Current IAS 9 A TC = 25 ℃ 28 Power Dissipation TC =100 ℃ PD W Operating Junction Temperature T J 150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 65 /W ℃

2012/07/23 Preliminary Page 3 SP N 10 T10 N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

A =25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =250uA 100 Gate Threshold V oltage V GS(th) V DS =V GS ,I D =250uA 1 3 V Gate Leakage Current I GSS V DS =0V ,V GS =±20V ±100 nA V DS =80V ,V GS =0V 25 Zero Gate V oltage Drain Current I DSS V DS =80V ,V GS =0V TJ=125℃ 250 uA On-State Drain Current I D(on) V DS ≥5V ,V GS =10V 9 A Drain-Source On-Resistance R DS(on) V GS = 10V , ID =5A 0.110 0.160 Ω Forward Transconductance gfs V DS =10V ,I D =5A 5.6 S Diode Forward V oltage V SD I S=9A,V GS =0V 1.3 V Dynamic Total Gate Charge Q g 10 16 Gate-Source Charge Q gs 2.5 Gate-Drain Charge Q gd V DS =80V ,V GS =10V ID = 5A 4.5 nC Input Capacitance C iss 430 Output Capacitance C oss 56 Reverse Transfer Capacitance C rss V DS =25,V GS =0V f=1MHz pF td(on) 6.5 Turn-On Time tr 10 td(off) 13 Turn-Off Time tf V DD =50V ,R L=10 Ω ID ≡5A,V GEN =10V R G =3.3 Ω 3.4 nS

2012/07/23 Preliminary Page 4 SP N 10 T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2012/07/23 Preliminary Page 5 SP N 10 T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2012/07/23 Preliminary Page 6 SP N 10 T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2012/07/23 Preliminary Page 7 SP N 10 T10 N-Channel Enhancement Mode MOSFET TO-220 PACKAGE OUTLINE

2012/07/23 Preliminary Page 8 SP N 10 T10 N-Channel Enhancement Mode MOSFET TO-220F PACKAGE OUTLINE

2012/07/23 Preliminary Page 9 SP N 10 T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2012 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com