SPN1026_10 SYNC-POWER | Alldatasheet
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2010/05/25 Ver.2 Page 1 SPN1026 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technolog y. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be u sed in most applications requiring up to 320mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. z Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. z High saturation current capability. Direct Logic-Level Interface: TTL/CMOS z Battery Operated Systems z Solid-State Relays FEATURES PIN CONFIGURATION( SOT-563 / SC-89-6L ) PART MARKING 60V/0.50A , RDS(ON)= 5.0Ω@VGS=10V 60V/0.30A , RDS(ON)= 5.5Ω@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-563 / SC-89-6L package design
2010/05/25 Ver.2 Page 2 SPN1026 Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 S1 Source 1
2 G1 Gate 1
3 D2 Drain 2
4 S2 Source 2
5 G2 Gate 2
6 D1 Drain1
ORDERING INFORMATION
Part Number Package Part Marking SPN1026S56RG SOT-563 D SPN1026S56RGB SOT-563 D ※ SPN1026S56RG : Tape Reel ; Pb – Free ※ SPN1026S56RGB : Tape Reel ; Pb – Free, Halogen – Free ABSOULTE MAXIMUM RATINGS (T A=25 Unless otherwise℃ noted) Parameter Symbol Typical Unit Drain-Source V oltage V DSS 60 V Gate –Source V oltage - Continuous V GSS ±20 V Gate –Source V oltage - Non Repetitive ( tp < 50μs) V GSS ±40 V Continuous Drain Current(TJ=150 )℃ T A=25℃ I D 0.32 A Pulsed Drain Current (∗) IDM 1.0 A Continuous Source Current(Diode Conduction) I S 0.25 A Power Dissipation T A=25℃ P D 0.30 W Operating Junction Temperature T J -55 ~ 150 ℃ Storage Temperature Range T STG -55 ~ 150 ℃ Thermal Resistance-Junction to Ambient R θJA 375 /W ℃
2010/05/25 Ver.2 Page 3 SPN1026 Dual N-Channel Enhancement Mode MOSFET (∗) Pulse width limited by safe operating area ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 60 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1.0 1.7 2.5 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=60V ,VGS=0V 1 Zero Gate V oltage Drain Current I DSS VDS=60V ,VGS=0V TJ= 85℃ 10 uA VGS=10V ,ID=0.50A 2.8 5.0 Drain-Source On-Resistance R DS(on) VGS= 5V ,ID=0.30A 3.5 5.5 Ω Source-drain Current I SD 0.32 A Source-drain Current (pulsed) I SDM (2) 1.4 A Forward Transconductance Gfs(1) V DS = 10 V, ID = 0.5 A 0.6 S Diode Forward V oltage V SD(1) V GS = 0 V, IS = 0.2A 0.85 1.5 V Dynamic Total Gate Charge Q g 1.4 2.0 Gate-Source Charge Q gs 0.8 Gate-Drain Charge Q gd VDD = 30 V, ID = 1 A, VGS = 5 V 0.5 nC Input Capacitance C iss 43 Output Capacitance C oss 20 Reverse Transfer Capacitance C rss VDS = 25 V, f = 1 MHz, VGS = 0 pF td(on) 5 Turn-On Time tr 15 td(off) 7 Turn-Off Time tf VDD = 30 V, ID = 0.5 A RG = 4.7Ω VGS = 4.5 V ns (1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area.
2010/05/25 Ver.2 Page 4 SPN1026 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2010/05/25 Ver.2 Page 5 SPN1026 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2010/05/25 Ver.2 Page 6 SPN1026 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2010/05/25 Ver.2 Page 7 SPN1026 Dual N-Channel Enhancement Mode MOSFET TYPICAL TESTING CIRCUIT
2010/05/25 Ver.2 Page 8 SPN1026 Dual N-Channel Enhancement Mode MOSFET SOT-563 PACKAGE OUTLINE
2010/05/25 Ver.2 Page 9 SPN1026 Dual N-Channel Enhancement Mode MOSFET
2010/05/25 Ver.2 Page 10 SPN1026 Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com