SPN1014 SYNC-POWER | Alldatasheet
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2013/01/03 Ver.1 Page 1 SP N1014 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN1014 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers FEATURES PIN CONFIGURATION( SOT-523 / SC-89 ) N-Channel 20V/0.65A,R DS(ON) =380m Ω@V GS =4.5V 20V/0.55A,R DS(ON) =450m Ω@V GS =2.5V 20V/0.45A,R DS(ON) =800m Ω@V GS =1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-523 (SC-89) package design PART MARKING
2013/01/03 Ver.1 Page 2 SP N1014 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 S Source
3 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPN1014S52RG SOT-523 4X SPN1014S52RGB SOT-523 4X ※ SPN1014S52RG : Tape Reel ; Pb – Free ※ SPN1014S52RGB : Tape Reel ; Pb – Free, Halogen – Free ABSOULTE MAXIMUM RATINGS (T A =25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 20 V Gate –Source V oltage V GSS ±12 V Continuous Drain Current(T J=150 )℃ TA =25℃ ID 0.65 A TA =80℃ 0.45 Pulsed Drain Current I DM 1.0 A Continuous Source Current(Diode Conduction) I S 0.3 A Power Dissipation TA =25℃ PD 0.27 W TA =70℃ 0.16 Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃
2013/01/03 Ver.1 Page 3 SP N1014 N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
A =25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D = 250uA 20 V Gate Threshold V oltage V GS(th) V DS =V GS ,I D =250uA 0.35 1.0 Gate Leakage Current I GSS V DS =0V ,V GS =±12V 30 uA Zero Gate V oltage Drain Current I DSS V DS = 16V ,V GS =0V 1 uA V DS = 16V ,V GS =0V TJ=55 ℃ 5 On-State Drain Current I D(on) V DS ≥ 4.5V ,V GS =5V 0.7 A Drain-Source On-Resistance R DS(on) V GS =4.5V ,I D =0.65A 0.26 0.38 Ω V GS =2.5V ,I D =0.55A 0.32 0.45 V GS =1.8V ,I D =0.45A 0.42 0.80 Forward Transconductance gfs V DS =10V ,I D =0.4A 1.0 S Diode Forward V oltage V SD I S=0.15A,V GS =0V 0.8 1.2 V Dynamic Total Gate Charge Q g V DS =10V ,V GS =4.5V , ID ≡0.6A 1.2 1.5 nC Gate-Source Charge Q gs 0.2 Gate-Drain Charge Q gd 0.3 Turn-On Time td(on) V DD =10V ,R L=10 Ω , ID ≡0.5A V GEN =4.5V ,RG =6 Ω 5 10 ns tr 8 15 Turn-Off Time td(off) 10 18 tf 1.2 2.8
2013/01/03 Ver.1 Page 4 SP N1014 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2013/01/03 Ver.1 Page 5 SP N1014 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2013/01/03 Ver.1 Page 6 SP N1014 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2013/01/03 Ver.1 Page 7 SP N1014 N-Channel Enhancement Mode MOSFET SOT-523 PACKAGE OUTLINE
2013/01/03 Ver.1 Page 8 SP N1014 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com