SPN100T12T220TGB SYNC-POWER | Alldatasheet

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Technical content

N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN100T12 is the N-Channel enhancement mod e power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control

FEATURES

 120V/100A , RDS(ON)=10mΩ@VGS=10V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-220F-3L/PPAK5x6-8L package design PIN CONFIGURATION TO-220-3L TO-220F-3L PPAK5x6-8L

N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 D Drain

3 S Source

1 S Source

2 S Source

4 G Gate

5 D Drain

6 D Drain

7 D Drain

8 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPN100T12T220TGB TO-220-3L SPN100T12 SPN100T12T220FTGB TO-220F-3L SPN100T12 SPN100T12DN8RGB PPAK5x6-8L SPN100T12 ※ SPN100T12T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN100T12T220FTGB : Tube ; Pb – Free ; Halogen - Free ※ SPN100T12DN8RGB : Tape Reel ; Pb – Free ; Halogen – Free

N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS 120 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current (Silicon Limited) TC=25℃ ID 100 A TC=70℃ 72 Continuous Drain Current(Silicon Limited) (PPAK5x6) TC=25℃ ID A TC=70℃ 60 Pulsed Drain Current IDM 300 A Power Dissipation@ TC=25℃ (TO-220) PD 104 W Power Dissipation@ TC=25℃ (TO-220F) 93 Power Dissipation@ TC=25℃ (PPAK5x6) 83 Avalanche Energy with Single Pulse (TC=25℃, L = 0.1mH.) EAS 468 mJ Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient (TO-220/TO-220F) RθJC 1.2 ℃/W Thermal Resistance-Junction to Ambient (PPAK5x6) RθJC 1.5 ℃/W Note : The maximum current rating is package limited at 120A for TO-220-3L The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 80A for PPAK5x6-8L

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=250uA 120 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=250uA 2 3 4 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=120V ,VGS=0V TJ = 25°C 1 uA VDS=120V ,VGS=0V TJ = 100°C 100 Drain-Source On-Resistance RDS(on) VGS=10V ,ID=20A 7.8 10 mΩ Diode Forward V oltage VSD IF=20A,VGS =0V 0.9 1.2 V Forward Transconductance gfs VDS=5V ,ID=20A 65 S Gate Resistance RG VGS=0V ,VDSOpen, f=1MHz 3.5 Ω Dynamic Total Gate Charge Qg VDS=60V ,VGS=10V ID=20A nC Gate-Source Charge Qgs 18 Gate-Drain Charge Qgd 6 Input Capacitance Ciss VDD=60V ,VGS=0V f=1MHz 4470 pF Output Capacitance Coss 235 Reverse Transfer Capacitance Crss 9.5 Turn-On Time td(on) VDD=60V, ID=20A,VGS=10V RG=10Ω nS tr 21 Turn-Off Time td(off) 38 tf 19

N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any vio lation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support device s or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com