SPN05T10 SYNC-POWER | Alldatasheet

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2011/12/09 Ver.1 Page 1 SPN05T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN05T10 is the N-Channe l logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN05T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. z High Frequency Small Power Switching for MB/NB/VGA z Network DC/DC Power System z Load Switch FEATURES PIN CONFIGURATION TO-252 PART MARKING ‹ 100V/2A,RDS(ON)= 320mΩ@VGS= 10V ‹ High density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TO-252 package design

2011/12/09 Ver.1 Page 2 SPN05T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 D Drain

3 S Source

ORDERING INFORMATION

Part Number Package Part Marking SPN05T10T252RGB TO-252 SPN05T10 ※ SPN05T10T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS 100 V Gate –Source V oltage V GSS ±20 V TA=25℃ 6 Continuous Drain Current(TJ=150 )℃ TA=70℃ ID 4.6 A Pulsed Drain Current I DM 9 A Power Dissipation T A=25℃ P D 40 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 62 /W ℃

2011/12/09 Ver.1 Page 3 SPN05T10 N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=250uA 100 Gate Threshold V oltage V GS(th) VDS=VGS,ID=250uA 1 2.0 2.5 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA VDS=80V ,VGS=0V 1 Zero Gate V oltage Drain Current I DSS VDS=80V ,VGS=0V TJ=55℃ 5 uA On-State Drain Current I D(on) V DS≥5V ,VGS =10V 2.2 A VGS= 10V ,ID=2A 0.30 0.32 Ω Drain-Source On-Resistance R DS(on) VGS= 4.5V ,ID=1A 0.31 0.34 Ω Forward Transconductance gfs V DS=5V ,ID=2A 2.4 S Diode Forward V oltage V SD I S=1A,VGS =0V 1.2 V Dynamic Total Gate Charge Q g 9 13 Gate-Source Charge Q gs 2 Gate-Drain Charge Q gd VDS=50V ,VGS=10V ID= 2A 1.4 nC Input Capacitance C iss 508 Output Capacitance C oss 29 Reverse Transfer Capacitance C rss VDS=15V ,VGS=0V f=1MHz 16.5 pF td(on) 2 Turn-On Time tr 21.5 td(off) 11.2 Turn-Off Time tf VDD=50V , ID=2A, VGEN=10V , RG=3.3Ω 18.8 nS

2011/12/09 Ver.1 Page 4 SPN05T10 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE

2011/12/09 Ver.1 Page 5 SPN05T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com