SPN04N60S5 INFINEON | Alldatasheet

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Technical content

2004-03-30Rev. 2.1 Page 1 SPN04N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 0.95 Ω ID 0.8 A Feature

  • New revolutionary high voltage technology
  • Worldwide best RDS(on) in SOT 223
  • Ultra low gate charge
  • Extreme dv/dt rated
  • Ultra low effective capacitances
  • Improved transconductance SOT-223 VPS051631 Type Package Ordering Code SPN04N60S5 SOT-223 Q67040-S4211 Marking 04N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current T A = 25 °C TA = 70 °C ID 0.8 0.65 A Pulsed drain current, tp limited by Tjmax TA = 25 °C ID puls 3 Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TA = 25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C

2004-03-30Rev. 2.1 Page 2 SPN04N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 4.5 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - soldering point RthJS - 20 - K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 110 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=4.5A - 700 - Gate threshold voltage VGS(th) ID=200µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 0.5 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=2.8A, Tj=25°C Tj=150°C 0.8 2.3 0.95 Ω Gate input resistance RG f=1MHz, open Drain - 20 -

2004-03-30Rev. 2.1 Page 3 SPN04N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.65A - 1 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 600 - pF Output capacitance Coss - 325 - Reverse transfer capacitance Crss - 15 - Effective output capacitance,2) energy related Co(er) VGS=0V, VDS=0V to 480V - 20 - pF Effective output capacitance,3) time related Co(tr) - 35 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=0.8A, RG=18Ω - 40 - ns Rise time tr - 20 - Turn-off delay time td(off) - 130 - Fall time tf - 30 - Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=0.8A - 4.1 - nC Gate to drain charge Qgd - 9.2 - Gate charge total Qg VDD=350V, ID=0.8A, VGS=0 to 10V - 17 - Gate plateau voltage V(plateau) VDD=350V, ID=0.8A - 8 - V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

2004-03-30Rev. 2.1 Page 4 SPN04N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TA=25°C - - 0.8 A Inverse diode direct current, pulsed ISM - - 3 Inverse diode forward voltage VSD VGS=0V, IF=IS - 0.85 1.05 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 200 - ns Reverse recovery charge Qrr - 1.2 - µC

2004-03-30Rev. 2.1 Page 5 SPN04N60S5

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 SPN04N60S5 Ptot

2 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TA=25°C 10 0 10 1 10 2 10 3 V VDS -3 10 -2 10 -1 10 0 10 1 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

3 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID 11V 13V

2004-03-30Rev. 2.1 Page 6 SPN04N60S5 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 6.5V 7.5V 8.5V 20V 12V 10V 9.5V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 1 2 3 4 5 6 7 A 8.5 ID 1.5 2.5 3.5 mΩ RDS(on) 20V 12V 10V 8.5V 7.5V 6.5V

7 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 0.65 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.5 1.5 2.5 3.5 4.5 Ω 5.5 SPN04N60S5 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID

2004-03-30Rev. 2.1 Page 7 SPN04N60S5 9 Typ. gate charge VGS = f (QGate) parameter: ID = 0.8 A pulsed 0 4 8 12 16 20 nC 28 QGate V SPN04N60S5 VGS

0.2 VDS max

0.8 VDS max

10 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -2 10 -1 10 0 10 1 10 A SPN04N60S5 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

11 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPN04N60S5 V(BR)DSS 12 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 10 20 30 40 50 60 70 80 V 100 VDS -1 10 0 10 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss

2004-03-30Rev. 2.1 Page 8 SPN04N60S5 13 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 µJ 3.5 Eoss Definition of diodes switching characteristics

2004-03-30Rev. 2.1 Page 9 SPN04N60S5 SOT223 ±0.1 ±0.2 ±0.10.7 321 6.5 acc. to +0.2 DIN 6784 1.6±0.1 15˚max ±0.040.28 7±0.3 ±0.23.5 0.5 0.1 maxmin BM0.25 B A 2.3 4.6 AM0.25

2004-03-30Rev. 2.1 Page 10 SPN04N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.