SPLBXXX SIEMENS | Alldatasheet
Document overview
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Technical content
Features
- Unmounted monolithic linear array
- High efficiency MOVPE-grown quantum well structure
- Highly reliable strained layer InGa(Al)As/GaAs material
- Standard wavelength selection is ± 3 nm, others on request
- Solderable p- and n-side metalization
Applications
- Pumping of solid state lasers (Nd: YAG, Yb: YAG, ...)
- Direct industrial applications (soldering, surface treatment, marking, ...)
- Heating, illumination
- Medical and printing application Type Power Wavelength 1) Ordering Code SPL BG81 SPL BG94 SPL BG98 25 W .. 30 W cw 808 nm 940 nm 980 nm Q62702-P1654 Q62702-P1733 Q62702-P3259 SPL BS79 SPL BS81 SPL BS94 50 W .. 100 W qcw 794 nm 808 nm 940 nm Q62702-P3257 Q62702-P1719 Q62702-P3258 1) Other wavelengths in the range of 780 ... 980 nm are available on request.
Semiconductor Group 2 / 2 1997-11-24 Characterictics (TA = 25 °C) Parameter Symbol Wave- length Typical Values Unit BGxx BSxx Recommended output power 1) Popt – 20 ... 30 cw 50 ... 100 qcw W Catastrophic optical damage limit 1), 2) PCOD ≤ 808nm ≥ 940nm > 80 > 130 > 110 > 200 W Threshold current 2) Ith – < 11 < 17 A Differential quantum efficiency 2) η – > 0.85 W/A Total conversion efficiency 1) ηtot – > 35 % Beam divergence (FWHM) θ⊥ × θ|| ≤ 808nm ≥ 940nm 45° × 12° 38° × 12° Deg. Standard pulse wavelength 2), 3) λpulse ≤ 808nm ≥ 940nm 802 934 804 935 nm Spectral width (FWHM) Δλ –< 4 n m Fill factor F –5 08 0% Emitter width (Structure) w – 200 (20 × 3) 100 µm µm Pitch p – 400 126 µm Bar width (Emitters per bar) W – 10.0 10.0 mm Cavity length L – 600 µm Bar thickness H – 115 ± 10 µm 1) Depending on mounting technique, i.e. on the resulting thermal resistance. 2) Calculated from measurements on one emitter of an unmounted bar (1 µs pulses at 1 kHz repetition rate). 3) Differing pulse wavelengths are available on request.