SPI21N10

SPI21N10 INFINEON | Alldatasheet

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SPP21N10,SPB21N10 SIPMOS Power-Transistor Product Summary VDS 100 V RDS(on) 80 m/G01 ID 21 A Feature /G01 N-Channel /G01 Enhancement mode /G01/G02 175°C operating temperature /G01 Avalanche rated /G01 dv/dt rated P-TO263-3-2 P-TO220-3-1P-TO262-3-1 Marking 21N10 21N10 21N10 Type Package Ordering Code SPP21N10 P-TO220-3-1 Q67042-S4116 SPB21N10 P-TO263-3-2 Q67042-S4102 SPI21N10 P-TO262-3-1 Q67042-S4117 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID 15.0 A Pulsed drain current TC=25°C ID puls 84 Avalanche energy, single pulse ID=21 A , VDD=25V, RGS=25/G01 EAS 130 mJ Reverse diode dv/dt IS=21A, VDS=80V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 90 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

SPP21N10,SPB21N10 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thJC - - 1.7 K/W Thermal resistance, junction - ambient, leaded R thJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area F) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS =0V, ID=1mA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID = 44 µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS =100V, VGS =0V, Tj=25°C VDS =100V, VGS =0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS =20V, VDS =0V IGSS - 1 100 nA Drain-source on-state resistance VGS =10V, ID=15.0A RDS(on) - 65 80 m/G01 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

SPP21N10,SPB21N10 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS /G01 2*ID*RDS(on)max , ID=15.0A 6.5 12.4 - S Input capacitance Ciss VGS =0V, VDS =25V, f=1MHz - 650 865 pF Output capacitance Coss - 140 186 Reverse transfer capacitanceCrss - 80 120 Turn-on delay time td(on) VDD =50V, VGS =10V, ID=21A, RG =13/G02 - 10 15 ns Rise time tr - 56 84 Turn-off delay time td(off) - 37 55 Fall time tf - 23 35 Gate Charge Characteristics Gate to source charge Q gs VDD =80V, ID=21A - 3.9 5.2 nC Gate to drain charge Q gd - 15.5 23.3 Gate charge total Qg VDD =80V, ID=21A, VGS =0 to 10V - 28.9 38.4 Gate plateau voltage V(plateau) VDD =80V, ID=21A - 6.2 - V Reverse Diode Inverse diode continuous forward current IS TC =25°C - - 21 A Inverse diode direct current, pulsed ISM - - 84 Inverse diode forward voltage VSD VGS =0V, IF =21A - 0.94 1.25 V Reverse recovery time trr VR =50V, IF =lS , diF /dt=100A/µs - 65 81.5 ns Reverse recovery charge Q rr - 153 192 nC

SPP21N10,SPB21N10

1 Power dissipation

Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 °C 190 TC W 100 SPP21N10 Ptot

2 Drain current

ID = f (TC ) parameter: VGS/G01 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPP21N10 ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 10 3 V VDS -1 10 0 10 1 10 2 10 A SPP21N10 ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 6.8µs

4 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP21N10 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

SPP21N10,SPB21N10 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 0 5 10 V 20 VDS A ID a b c de VGS[V]= a= 5.6 b= 6.0 c= 7.0 d= 8.0 e= 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 5 10 15 20 25 30 35 40 A 50 ID 100 120 140 160 180 200 220 m/G01 260 RDS(on) a b c d e VGS[V]= a= 5.6 b= 6.0 c= 7.0 d= 8.0 e= 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G01 2 x ID x RDS(on)max parameter: tp = 80 µs 2 3 4 5 6 V 8 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 4 8 12 16 A 24 ID S gfs

SPP21N10,SPB21N10

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 15.0 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj 120 160 200 240 280 m/G01 340 SPP21N10 RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -65 -35 -5 25 55 85 115 °C 175 Tj 1.5 2.5 V VGS(th) ID=0.25mA ID=44µA 11 Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 5 10 15 20 25 30 V 40 VDS 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -1 10 0 10 1 10 2 10 A SPP21N10 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

SPP21N10,SPB21N10 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 21 A , VDD = 25 V, R GS = 25 /G02 25 45 65 85 105 125 145 °C 185 Tj 100 110 120 mJ 140 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 21 A pulsed 0 5 10 15 20 25 30 35 40 nC 50 QGate V SPP21N10 VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj 100 102 104 106 108 110 112 114 V 120 SPP21N10 V (BR)DSS

SPP21N10,SPB21N10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.