SPI20N65C3

SPP20N65C3 INFINEON | Alldatasheet

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Technical content

SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.19 Ω ID 20.7 A Feature

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 20N65C3 20N65C3 20N65C3 Type Package Ordering Code SPP20N65C3 P-TO220-3-1 Q67040-S4556 SPA20N65C3 P-TO220-3-31 Q67040-S4555 SPI20N65C3 P-TO262-3-1 Q67040-S4560 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 20.7 13.1 20.71) 13.11) A Pulsed drain current, tp limited by Tjmax ID puls 62.1 62.1 A Avalanche energy, single pulse ID=3.5A, VDD =50V EAS 690 690 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7A, VDD =50V EAR 1 1 Avalanche current, repetitive tAR limited by Tjmax IAR 7 7 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 34.5 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C

SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 20.7 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 650 5) - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=7A - 730 - Gate threshold voltage VGS(th) ID=1000µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =600V, V GS =0V, Tj=25°C Tj=150°C 0.1 100 µA Gate-source leakage current IGSS V GS =20V, V DS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=13.1A Tj=25°C Tj=150°C 0.16 0.43 0.19 Ω Gate input resistance R G f=1MHz, open drain - 0.54 -

SPP20N65C3, SPA20N65C3 SPI20N65C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=13.1A - 17.5 - S Input capacitance C iss V GS =0V, VDS =25V, f=1MHz - 2400 - pF Output capacitance C oss - 780 - Reverse transfer capacitanceC rss - 50 - Effective output capacitance,6) energy related Co(er) V GS =0V, V DS =0V to 480V - 83 - Effective output capacitance,7) time related Co(tr) - 160 - Turn-on delay time td(on) V DD =380V, VGS =0/13V, ID=20.7A, R G =3.6Ω , Tj=125 - 10 - ns Rise time tr V DD =380V, VGS =0/13V, ID=20.7A, R G =3.6Ω - 5 - Turn-off delay time td(off) - 67 100 Fall time tf - 4.5 12 Gate Charge Characteristics Gate to source charge Q gs V DD =480V, ID=20.7A - 11 - nC Gate to drain charge Q gd - 33 - Gate charge total Qg V DD =480V, ID=20.7A, V GS =0 to 10V - 87 114 Gate plateau voltage V(plateau) V DD =480V, ID=20.7A - 5.5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5HTRB @ 1000h, 600V, Tjmax resp. accelerated HTRB @ 168h, 600V, Tj= 175°C according to JEDEC A108, MIL-STD 750/1038-1040, 1042 o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 7Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS.

SPP20N65C3, SPA20N65C3 SPI20N65C3 Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 20.7 A Inverse diode direct current, pulsed ISM - - 62.1 Inverse diode forward voltage VSD V GS =0V, IF=IS - 1 1.2 V Reverse recovery time trr V R=480V, IF=IS , diF/dt=100A/µs - 500 800 ns Reverse recovery charge Q rr - 11 - µC Peak reverse recovery currentIrrm - 70 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1400 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.00769 0.00769 K/W Cth1 0.0003763 0.0003763 Ws/K Rth2 0.015 0.015 Cth2 0.001411 0.001411 Rth3 0.029 0.029 Cth3 0.001931 0.001931 Rth4 0.114 0.163 Cth4 0.005297 0.005297 Rth5 0.136 0.323 Cth5 0.012 0.008453 Rth6 0.059 2.526 Cth6 0.091 0.412 SPP_B SPP_B External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

SPP20N65C3, SPA20N65C3 SPI20N65C3

1 Power dissipation

Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 160 180 200 W 240 SPP20N65C3 Ptot

2 Power dissipation FullPAK

Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

4 Safe operating area FullPAK

ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

SPP20N65C3, SPA20N65C3 SPI20N65C3

5 Transient thermal impedance FullPAK

ZthJC = f (tp) parameter: D = tp/t 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4,5V 5,5V 6,5V 20V 10V 7 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 2 4 6 8 10 12 14 16 18 20 22 V 25 VDS A ID 4.5V 5.5V 20V 10V 8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 5 10 15 20 25 30 A 40 ID 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 Ω 1.5 RDS(on) 4V 4.5V 5.5V 6.5V 20V

SPP20N65C3, SPA20N65C3 SPI20N65C3

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 13.1 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ω 1.1 SPP20N65C3 RDS(on) typ 98% 10 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 V 9 VGS A ID 150°C 25°C

12 Forward characteristics of body diode

I F = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPP20N65C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 11 Typ. gate charge VGS = f (QGate) parameter: ID = 20.7 A pulsed 0 20 40 60 80 100 nC 140 QGate V SPP20N65C3 VGS 0,8 VDS max DS maxV0,2

SPP20N65C3, SPA20N65C3 SPI20N65C3 13 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, R G =3.6Ω 0 4 8 12 16 A 24 ID 0 10 1 10 2 10 ns t tr td(off) td(on) tf 14 Typ. switching time t = f ( RG ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=20.7 A 0 5 10 15 20 25 30 Ω 40 R G 0 10 1 10 2 10 3 10 ns t td(off) td(on) tr tf 15 Typ. drain current slope di/dt = f(RG ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=20.7A 0 5 10 15 20 25 30 Ω 40 R G 500 1000 1500 2000 2500 3000 3500 4000 A/µs 5000 di/dt di/dt(on) di/dt(off) 16 Typ. drain source voltage slope dv/dt = f(R G ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=20.7A 0 5 10 15 20 25 30 Ω 40 R G 100 V/ns 150 dv/dt dv/dt(on) dv/dt(off)

SPP20N65C3, SPA20N65C3 SPI20N65C3 17 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, R G =3.6Ω 0 3 6 9 12 15 A 21 ID 0.01 0.02 0.03 0.04 0.05 0.06 mWs 0.08 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses 18 Typ. switching losses E = f(R G ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V,ID=11A 0 5 10 15 20 25 30 Ω 40 R G 0.05 0.1 0.15 0.2 0.25 0.3 mWs 0.4 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses

19 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.5 1.5 2.5 3.5 4.5 5.5 A IAR Tj(Start)=25°C Tj(Start)=125°C

20 Avalanche energy

E AS = f (Tj) par.: ID = 3.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 200 300 400 500 mJ 700 EAS

SPP20N65C3, SPA20N65C3 SPI20N65C3

22 Avalanche power losses

PAR = f (f ) parameter: EAR =1mJ 10 4 10 5 10 6 Hz f 100 150 200 250 300 350 400 W 500 PAR

21 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 585 605 625 645 665 685 705 725 745 V

785 SPP20N65C3

V(BR)DSS 23 Typ. capacitances C = f ( VDS ) parameter: VGS =0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 5 10 pF C Ciss Coss Crss 24 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 V 600 VDS µJ Eoss

SPP20N65C3, SPA20N65C3 SPI20N65C3 Definition of diodes switching characteristics

SPP20N65C3, SPA20N65C3 SPI20N65C3 P-TO-220-3-1 A BA0.25 M 2.8 15.38±0.6 2.54 0.75±0.1 ±0.131.27 4.44 B 9.98±0.48 0.05 All metal surfaces tin plated, except area of cut. C ±0.2 10±0.4 3.7 C 0.5±0.1 ±0.95.23 13.5±0.5 Metal surface min. x=7.25, y=12.3 ±0.2 ±0.221.17 ±0.22.51

SPP20N65C3, SPA20N65C3 SPI20N65C3 P-TO-262-3-1 (I2-PAK) BA0.25 M Typical 2.54 3 x 0.75±0.1 1.05 1.27 B 9.25±0.2 0.05 Metal surface min. X = 7.25, Y = 6.9 C 11.6±0.3 10 ±0.2 C 2.4 0.5±0.1 ±0.24.55 13.5±0.5 All metal surfaces tin plated, except area of cut. ±0.31 8.51) 2 x 4.4 7.551) 0...0.15 0...0.3 2.4 A P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01)

SPP20N65C3, SPA20N65C3 SPI20N65C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.