SPI11N60CFD INFINEON | Alldatasheet

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2009-04-24Rev. 2.6 Page 1 SPI11N60CFD Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.44 Ω ID 11 A Feature

  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • High peak current capability
  • Intrinsic fast-recovery body diode
  • Extreme low reverse recovery charge PG-TO262 Type Package Pb-free SPI11N60CFD PG-TO262 Yes Marking 11N60CFD Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current, tp limited by Tjmax ID puls 28 Avalanche energy, single pulse I D = 5.5 A, VDD = 50 V EAS 340 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 11 A, VDD = 50 V EAR 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 A Reverse diode dv/dt IS=11A, VDS=480V, Tj=125°C dv/dt 40 V/ns Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +150 °C

2009-04-24Rev. 2.6 Page 2 SPI11N60CFD Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C dv/dt 80 V/ns Maximum diode commutation speed VDS = 480 V, ID = 11 A, Tj = 125 °C diF/dt 600 A/µs Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=11A - 700 - Gate threshold voltage VGS(th) ID=500µΑ, VGS=VDS 3 4 5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 1.1 900 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=7A, Tj=25°C Tj=150°C 0.38 1.02 0.44 Ω Gate input resistance RG f=1MHz, open Drain - 0.86 -

2009-04-24Rev. 2.6 Page 3 SPI11N60CFD Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=7A - 8.3 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1200 - pF Output capacitance Coss - 390 - Reverse transfer capacitance Crss - 30 - Effective output capacitance,2) energy related Co(er) VGS=0V, VDS=0V to 480V - 45 - pF Effective output capacitance,3) time related Co(tr) - 85 - Turn-on delay time td(on) VDD=380V, VGS=0/10V, ID=11A, RG=6.8Ω - 34 - ns Rise time tr - 18 - Turn-off delay time td(off) - 43 - Fall time tf - 7 - Gate Charge Characteristics Gate to source charge Qgs VDD=480V, ID=11A - 9 - nC Gate to drain charge Qgd - 23 - Gate charge total Qg VDD=480V, ID=11A, VGS=0 to 10V - 48 64 Gate plateau voltage V(plateau) VDD=480V, ID=11A - 7 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

2009-04-24Rev. 2.6 Page 4 SPI11N60CFD Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 11 A Inverse diode direct current, pulsed ISM - - 28 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , diF/dt=100A/µs - 140 - ns Reverse recovery charge Qrr - 0.7 - µC Peak reverse recovery current Irrm - 11 - A Peak rate of fall of reverse recovery current dirr/dt - 1200 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.015 K/W Rth2 0.03 Rth3 0.056 Rth4 0.197 Rth5 0.216 Rth6 0.083 Thermal capacitance Cth1 0.0001878 Ws/K Cth2 0.0007106 Cth3 0.000988 Cth4 0.002791 Cth5 0.007285 Cth6 0.063 External HeatsinkTj T case Tamb C th1 C th2 Rth1 R th,n C th,n Ptot (t)

2009-04-24Rev. 2.6 Page 5 SPI11N60CFD

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 110 120 W 140 SPP11N60CFD Ptot

2 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TC=25°C V VDS -210 -110 010 110 210 A ID tp=0.001 ms tp=0.01 ms tp=0.1 ms tp=1 ms DC

3 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID Vgs = 20V Vgs = 10V Vgs = 9V Vgs = 8.5V Vgs = 8V Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V

2009-04-24Rev. 2.6 Page 6 SPI11N60CFD 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID Vgs = 20V Vgs = 8.5V Vgs = 8V Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 4 8 12 16 20 A 28 ID 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Ω RDS(on) Vgs = 6V Vgs = 6.5V Vgs = 7V Vgs = 7.5V Vgs = 8V Vgs = 8.5V Vgs = 20V

7 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 Ω 2.6 SPP11N60CFD RDS(on) typ 98% 8 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID Tj = 150?C Tj = 25?C

2009-04-24Rev. 2.6 Page 7 SPI11N60CFD 9 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 0 10 20 30 40 50 nC 70 QGate V SPP11N60CFD VGS

0.2 VDS max

0.8 VDS max

10 Forward characteristics of body diode

I F = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP11N60CFD IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

11 Avalanche SOA

I AR = f (tAR) par.: Tj ≤ 150 °C µs tAR A IAR Tj(START) =125°C Tj(START) =25°C

12 Avalanche energy

E AS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 mJ 350 EAS

2009-04-24Rev. 2.6 Page 8 SPI11N60CFD

13 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP11N60CFD V(BR)DSS

14 Avalanche power losses

P AR = f (f ) parameter: EAR=0.6mJ Hz f 100 150 200 W 300 PAR 15 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 pFC Ciss Coss Crss 16 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 5.5 µJ 7.5 Eoss

2009-04-24Rev. 2.6 Page 9 SPI11N60CFD 17 Typ. reverse recovery charge Qrr = f(TJ) parameter: ID = 11A 25 50 75 °C 125 Tj 600 700 800 900 1000 1100 1200 Qrr [nC] 18 Typ. reverse recovery charge Qrr = f(ID) parameter: di/dt = 100 A/µs 1 2 3 4 5 6 7 8 9 A 11 ID 200 300 400 500 600 700 800 900 1000 1100 1200 Qrr [nC] Tj = 25°C Tj = 125°C 19 Typ. reverse recovery charge Qrr = f(di/dt) parameter: ID = 11 A 100 200 300 400 500 600 700 A/µs 900 di/dt 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 Qrr [nC] Tj = 125°C Tj = 25°C

2009-04-24Rev. 2.6 Page 10 SPI11N60CFD Definition of diodes switching characteristics

2009-04-24Rev. 2.6 Page 11 SPI11N60CFD PG-TO-262-3-1

2009-04-24Rev. 2.6 Page 12 SPI11N60CFD